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An impedance matched parametric amplifier (IMPA) with Josephson junctions is fabricated and characterized. A hybrid structure containing coplanar and strip structures is implemented to realize an impedance taper line and a plate capacitor in an LC nonlinear resonator based on Josephson junctions. The upper plate of the capacitor is isolated with SiN x without grounding as well as the strips. Such easily-prepared designs greatly reduce the requirements for lithography alignment and precision, which makes the fabrication process more reliable. The experimental results show that in such IMPA a gain higher than 25 dB with a bandwidth of about 100 MHz can be obtained. This broadband amplifier operates close to the quantum limit. By adjusting the working point, a higher bandwidth of about 400 MHz can be obtained with a gain of about 17 dB.

We design and fabricate λ/2 coplanar waveguide NbN resonators, the thickness and length of which are only several nanometers and hundred microns, respectively. The quality factor of such compact resonators can reach up to 7.5 × 104 at single photon power level at 30 mK with the resonance frequency around 6.835 GHz. In order to tune the resonant frequency, the resonator is terminated to the ground with a dc-SQUID. By tuning the magnetic flux in the dc-SQUID, the effective inductance of the dc-SQUID is varied, which leads to the change in the resonant frequency of the resonator. The tunability range is more than 30 MHz and the quality factor is about 3 × 103. These compact and tunable NbN resonators have potential applications in the quantum information processing, such as in the precision measurement, coupling and/or reading out the quantum states of qubits.

We have realized a frequency-tunable transmon in a three-dimensional cooper cavity using a direct current superconducting quantum interference device. Both the transition frequency of the transmon and the frequency of the dressed cavity can be varied with the applied external flux bias, which are well consistent with the theoretical model. The range of the variable transition frequency is from 5.188 GHz to 7.756 GHz. The energy relaxation time of the transmon is hundreds of nanoseconds.

We design and fabricate two types of superconducting niobium coplanar waveguide microwave resonators with different coupling capacitors on high purity Si substrates. Their microwave transmissions are measured at 20 mK. It is found that these two types of resonators possess significantly different loaded quality factors; one is 5.6 × 103 and the other is 4.0 × 104. The measured data are fitted well by classical ABCD matrix approach and consequently the coupling capacitances are determined. It is found that the transmission peak deviates from the standard Lorentizian with a frequency broadening.

We report on fractal-featured square and ring-shaped apertures with a Sierpinski carpet pattern (SCP) on metallic and superconducting NbN films. Multiple extraordinary terahertz (THz) transmission peaks are studied in the transmission spectra using both THz time-domain spectroscopy and numerical simulation. The characteristic transmission peaks are found to be associated with the interaction of surface plasmon polaritons (SPPs) and localized surface plasmons (LSPs) for ring-shaped apertures. The effect of LSPs is less remarkable in the square apertures. For the superconducting NbN film, when the temperature is slightly lower than the critical transition temperature Tc, the peak magnitude of SPP resonances is most prominent due to the non-monotonic temperature dependence of kinetic inductance. These results provide a new way to design compact and efficient THz devices.

For high-quality superconducting tunnel junctions (STJs), it is necessary to reduce leakage current as much as possible. We describe the fabrication of niobium STJs using the selective niobium (Nb) etching process and various ways to minimize the leakage current. The experiment shows that the leakage current mainly comes from shorts in the tunnel barrier layer rather than those around the junction edges. Through systematic analysis of the thin film stress, surface morphology and modified junction structures, we fabricate high-quality Nb STJs with a gap voltage of 2.8 mV and a leakage current at 1 mV as low as 8.1% and 0.023% at 4.2 K and 0.3 K, respectively.