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One of the important phenomena in Electromigration (EM) is Blech Effect. The existence of Threshold Current Density-Length Product or EM Threshold has such fundamental and technological consequences in the design, manufacture, and testing of electronics. Temperature-dependence of Blech Product had been thermodynamically established and the real behavior of such interconnect materials have been extensively studied. The present paper reviewed the temperature-dependence of EM threshold in metallization lines of different materials and structure as found in relevant published articles. It is expected that the reader can see a big picture from the compiled data, which might be overlooked when it was examined in pieces.

This paper presents further development of the constitutive equations based on model-inspired phenomenological approach. In our previous approach, three figures of merit functions were examined to study the temperature-dependence of yield stress and found two model equations that may work especially well for the small volume materials in the moderate temperature ranges (2 5). We have investigated the underlying assumptions behind each model to substantiate their physical correctness. We examined the parameters in each models using the frame of flow stress being dislocation-mediated, thermally activated, and obstacle-controlled process. These examinations led us to find refined model equations with parameters that can be related to the characteristics of flow mechanisms.