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Advanced electronic materials are the fundamental building blocks of integrated circuits (ICs). The microscale properties of electronic materials (e.g., crystal structures, defects, and chemical properties) can have a considerable impact on the performance of ICs. Comprehensive characterization and analysis of the material in real time with high-spatial resolution are indispensable. In situ transmission electron microscope (TEM) with atomic resolution and external field can be applied as a physical simulation platform to study the evolution of electronic material in working conditions. The high-speed camera of the in situ TEM generates a high frame rate video, resulting in a large dataset that is beyond the data processing ability of researchers using the traditional method. To overcome this challenge, many works on automated TEM analysis by using machine-learning algorithm have been proposed. In this review, we introduce the technical evolution of TEM data acquisition, including analysis, and we summarize the application of machine learning to TEM data analysis in the aspects of morphology, defect, structure, and spectra. Some of the challenges of automated TEM analysis are given in the conclusion.

Two-dimensional (2D) metallic transition metal dichalcogenides (TMDCs) with large specific surface areas and high conductivities are promising catalysts for electrocatalytic hydrogen production. The highly active edges of the 2D metallic TMDCs are the desirable catalytic sites for the hydrogen evolution reaction (HER). Herein, the vanadium diselenide (VSe2) quantum dots with high-density edge sites are prepared by tip sonication of the self-detached VSe2 nanosheets. The spontaneously released VSe2 nanosheets, without chemical-involved transfer, offer a noncontaminated catalyst for HER. Compared to the VSe2 nanosheets, VSe2 quantum dots with a high density of active edges present a significant enhancement of the electrocatalytic performance. The reduced overpotential and transfer resistance indicate the lower Gibbs free energy and faster faradic process of the VSe2 quantum dots for HER. The active edge sites of VSe2 quantum dots show improved catalytic properties in thermodynamic and kinetic aspects. The VSe2 quantum dots loaded on a carbon cloth could be used as a flexible electrode for HER. This work provides an effective way to regulate the defects of the 2D TMDCs for high-performance HER catalysts and also offers a catalyst for flexible HER.

Non-volatile memory (NVM) devices with non-volatility and low power consumption properties are important in the data storage field. The switching mechanism and packaging reliability issues in NVMs are of great research interest. The switching process in NVM devices accompanied by the evolution of microstructure and composition is fast and subtle. Transmission electron microscopy (TEM) with high spatial resolution and versatile external fields is widely used in analyzing the evolution of morphology, structures and chemical compositions at atomic scale. The various external stimuli, such as thermal, electrical, mechanical, optical and magnetic fields, provide a platform to probe and engineer NVM devices inside TEM in real-time. Such advanced technologies make it possible for an in situ and interactive manipulation of NVM devices without sacrificing the resolution. This technology facilitates the exploration of the intrinsic structure-switching mechanism of NVMs and the reliability issues in the memory package. In this review, the evolution of the functional layers in NVM devices characterized by the advanced in situ TEM technology is introduced, with intermetallic compounds forming and degradation process investigated. The principles and challenges of TEM technology on NVM device study are also discussed.

Broadband infrared photodetectors based on two-dimensional (2D) materials which are the research focus in the infrared field, have wide applications in remote sensing, thermal imaging, and astronomy observation. In this article, the photodetector based on 2D ferromagnetic material CoSe is studied at room temperature, demonstrating the air-stable, broadband, and up to long wavelength properties. The CoSe material is applied to infrared photodetectors for the first time. The 2D material CoSe is synthesized by using the chemical vapor deposition method. The size of the as-grown CoSe is up to 71.8 μm. The photoresponse of the CoSe photodetector ranges from 450 nm to 10.6 μm. The photoresponsivity of this photodetector is up to 2.58 A W-1 under the 10.6 μm illumination at room temperature. This work provides a new material for broadband photodetector at room temperature and builds a bridge for the magnetoelectronic and broadband photoelectric fields.