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We report electron transport mechanism in FePt-C granular films as a function of temperature by varying intergranular separation. FePt-C nanogranular films were prepared by sputtering on MgO substrates. From magnetic measurement of the sample, a coercivity of about 3T was found in the perpendicular direction. Above 25 K, the electrical resistivity of the films were found to obey Mott variable range hopping, Efros-Shklovskii variable range hopping and extended critical regime depending on the intergranular separation. However, at lower temperatures it deviates from the above behaviour showing an increase in conductance. Reduced activation energy calculated from resistivity data of these films shows metal-insulator transition. The metallic nature observed at low temperature was attributed to the intergranular ferromagnetic type ordering between granules that enhances the transport of electrons. Intergranular separation, thus, can be used as a tool to engineer the electron transport mechanism to different hopping regimes or extended critical regime in these films.

A detailed study of the Fe2 − xCoxMnSi (0 ≤ x ≤ 0.6) alloys has been carried out by investigating the samples by x-ray diffraction, Mössbauer spectroscopy, magnetization, transport and current spin polarization measurements. A perfectly ordered L21 phase is found to exist for x = 0.4. Competing magnetic interactions between ferromagnetic and antiferromagnetic (AFM) phases are seen in the alloys with x < 0.2, whereas the AFM phase is completely absent for x ≥ 0.2 as revealed by the magnetization and resistivity data. The Curie temperature and saturation magnetization values increase with increase in the Co concentration. Anomalous, non metallic-like behaviour is observed for x = 0.4. Current spin polarization values of 0.61  ±  0.01 and 0.66  ±  0.01 were deduced for x = 0.2 and x = 0.4 respectively, using the point contact Andreev reflection spectroscopy . Considering the high spin polarization and Curie temperature, materials with x ≥ 0.2 appear to be very promising for spintronic devices. [ABSTRACT FROM AUTHOR]