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Your search keyword '"Antonov, I. N."' showing total 19 results
Start Over Author "Antonov, I. N." Publisher iop publishing
19 results on '"Antonov, I. N."'

7. Experimental investigations of local stochastic resistive switching in yttria stabilized zirconia film on a conductive substrate

Author

Filatov, D O, primary, Novikov, A S, additional, Baranova, V N, additional, Antonov, D A, additional, Kruglov, A V, additional, Antonov, I N, additional, Zdoroveyshchev, A V, additional, Koryazhkina, M N, additional, Gorshkov, O N, additional, Dubkov, A A, additional, Carollo, A, additional, and Spagnolo, B, additional

Published
2020
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8. A mechanism of effect of optical excitation on resistive switching in ZrO2(Y) films with Au nanoparticles.

Author

Novikov, A S, Filatov, D O, Shenina, M E, Antonov, I N, Antonov, D A, Nezhdanov, A V, Vorontsov, V A, Pavlov, D A, and Gorshkov, O N

Subjects
KELVIN probe force microscopy, DIELECTRIC films, METALLIC films, METAL nanoparticles, OPTICAL switching
Abstract

A mechanism of effect of optical excitation on resistive switching of dielectric films with embedded metal nanoparticles (MNPs) has been proposed. The mechanism is related to a charging of the MNPs due to internal photoemission of electrons from the MNPs, which results in an increasing of the electric field strength at the MNP surfaces that, in turn, promotes the rupture and restoring of the conductive filaments in the dielectric film. The increasing of the electric filed strength due to the MNP charging as a function of the MNP sizes and positions inside the dielectric films was evaluated using a simple model taking into account the mirror charges on the conductive electrodes of a memristor stack. The single electron charging was found to be essential at small MNP radii (∼1 nm). The proposed mechanism was confirmed experimentally by studying the photoexcitation-induced charging of Au MNPs (with average radius 1.6–1.8 nm) embedded into a 10 nm thick ZrO2(Y) film by Kelvin probe force microscopy. [ABSTRACT FROM AUTHOR]

Published
2021
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9. Noise-induced resistive switching in a memristor based on ZrO2(Y)/Ta2O5 stack

Author

Filatov, D O, primary, Vrzheshch, D V, additional, Tabakov, O V, additional, Novikov, A S, additional, Belov, A I, additional, Antonov, I N, additional, Sharkov, V V, additional, Koryazhkina, M N, additional, Mikhaylov, A N, additional, Gorshkov, O N, additional, Dubkov, A A, additional, Carollo, A, additional, and Spagnolo, B, additional

Published
2019
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17. Resistive switching in the Au/Zr/ZrO2-Y2O3/TiN/Ti memristive devices deposited by magnetron sputtering

Author

Gorshkov, O N, primary, Mikhaylov, A N, additional, Kasatkin, A P, additional, Tikhov, S V, additional, Filatov, D O, additional, Pavlov, D A, additional, Belov, A I, additional, Koryazhkina, M N, additional, Bobrov, A I, additional, Malekhonova, N V, additional, Gryaznov, E G, additional, Antonov, I N, additional, and Shenina, M E, additional

Published
2016
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