1. Gate Tunable Supercurrent in Josephson Junctions Based on Bi2Te3 Topological Insulator Thin Films.
- Author
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Wu, Wei-Xiong, Feng, Yang, Bai, Yun-He, Jiang, Yu-Ying, Gao, Zong-Wei, Li, Yuan-Zhao, Luan, Jian-Li, Zhou, Heng-An, Jiang, Wan-Jun, Feng, Xiao, Zhang, Jin-Song, Zhang, Hao, He, Ke, Ma, Xu-Cun, Xue, Qi-Kun, and Wang, Ya-Yu
- Subjects
TOPOLOGICAL insulators ,THIN films ,FERROELECTRIC thin films ,JOSEPHSON junctions ,INDIUM gallium zinc oxide ,SEMIMETALS ,CARRIER density ,SUPERCONDUCTING films ,FERMI energy - Abstract
We report transport measurements on Josephson junctions consisting of Bi
2 Te3 topological insulator (TI) thin films contacted by superconducting Nb electrodes. For a device with junction length L = 134 nm, the critical supercurrent Ic can be modulated by an electrical gate which tunes the carrier type and density of the TI film. Ic can reach a minimum when the TI is near the charge neutrality regime with the Fermi energy lying close to the Dirac point of the surface state. In the p-type regime the Josephson current can be well described by a short ballistic junction model. In the n-type regime the junction is ballistic at 0.7 K < T < 3.8 K while for T < 0.7 K the diffusive bulk modes emerge and contribute a larger Ic than the ballistic model. We attribute the lack of diffusive bulk modes in the p-type regime to the formation of p–n junctions. Our work provides new clues for search of Majorana zero mode in TI-based superconducting devices. [ABSTRACT FROM AUTHOR]- Published
- 2021
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