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We present a straightforward method which may greatly simplify and lower the threshold for determining the phase of the relatively enigmatic quantum material-ZrTe 5 . In this study, without directly probing the band structure, we identify the topological phase of the three-dimensional (3D) bulk ZrTe 5 crystal solely through low-temperature electrical and magnetotransport measurements. A two-dimensional (2D) weak antilocalization (WAL) effect was observed in our bulk ZrTe 5 crystal, along with clear Shubnikov-de Haas oscillations. The large prefactorαderived from WAL analyses indicates the presence of multiple conducting channels in the bulk ZrTe 5 crystal, where each channel is associated with individual 2D ZrTe 5 layers. It is the largeαvalue provides insights into the topological Dirac semimetal phase inherent to our ZrTe 5 crystal. Additionally, we analyze the pronounced linear magnetoresistance and saturation behavior under a perpendicular magnetic field. Our results suggest that bulk ZrTe 5 crystals, which exhibit unique layered transport features, serve as a promising platform for further research in quantum phases and transitions in 3D quantum systems., (Creative Commons Attribution license.)

Preparing Cd 3 As 2 , which is a three-dimensional (3D) Dirac semimetal in certain crystal orientation, on Si is highly desirable as such a sample may well be fully compatible with existing Si CMOS technology. However, there is a dearth of such a study regarding Cd 3 As 2 films grown on Si showing the chiral anomaly. Here, for the first time , we report the novel preparation and fabrication technique of a Cd 3 As 2 (112) film on a Si (111) substrate with a ZnTe (111) buffer layer which explicitly shows the chiral anomaly with a nontrivial Berry's phase of π . Despite the Hall carrier density (n3D≈9.42×1017cm -3 ) of our Cd 3 As 2 film, which is almost beyond the limit for the portents of a 3D Dirac semimetal to emerge, we observe large linear magnetoresistance in a perpendicular magnetic field and negative magnetoresistance in a parallel magnetic field. These results clearly demonstrate the chiral magnetic effect and 3D Dirac semimetallic behavior in our silicon-based Cd 3 As 2 film. Our tailoring growth of Cd 3 As 2 on a conventional substrate such as Si keeps the sample quality, while also achieving a low carrier concentration., (© 2024 IOP Publishing Ltd.)

The magnetotransport properties of a hybrid InSe/monolayer graphene in a SiC system are systematically studied. Compared to those of its bare graphene counterpart, in InSe/graphene, we can effectively modify the carrier density, mobility, effective mass, and electron-electron (e-e) interactions enhanced by weak disorder. We show that in bare graphene and hybrid InSe/graphene systems, the logarithmic temperature (lnT) dependence of the Hall slope R H  = δR xy /δB = δρ xy /δB can be used to probe e-e interaction effects at various temperatures even when the measured resistivity does not show a lnT dependence due to strong electron-phonon scattering. Nevertheless, one needs to be certain that the change of R H is not caused by an increase of the carrier density by checking the magnetic field position of the longitudinal resistivity minimum at different temperatures. Given the current challenges in gating graphene on SiC with a suitable dielectric layer, our results suggest that capping a van der Waals material on graphene is an effective way to modify the electronic properties of monolayer graphene on SiC.