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We numerically proposed and demonstrated a semiconductor meta-surface light absorber, which consists of a silicon patches array on a silicon thin-film and an opaque silver substrate. The Mie resonances of the silicon patches and the fundamental cavity mode of the ultra-thin silicon film couple strongly to the incident optical field, leading to a multi-band perfect absorption. The maximal absorption is above 99.5% and the absorption is polarization-independent. Moreover, the absorption behavior is scalable in the frequency region via tuning the structural parameters. These features hold the absorber platform with wide applications in optoelectronics such as hot-electron excitation and photo-detection.

We theoretically present a powerful method to achieve a continuous metal film structure with broadband optical transparency via introducing a dielectric Fabry-Pérot (FP) cavity. An incident optical field could be efficiently coupled and confined with the strong localized plasmons by the non-close-packed plasmonic crystal at the input part and could then become re-radiated output via the transmission channel supported by the dielectric cavity. The formed photonic-plasmonic system could therefore make the seamless metal film structure have a superior near-unity transparency (up to 97%) response and a broadband transparent spectrum with bandwidth >245 nm (with transmittance >90%) in the optical regime. The observed optical properties of the proposed structure can be highly tuned via varying the structural parameters. Based on the colloidal assembly method, the proposed plasmonic crystal can be fabricated in a large area. In addition, the achieved optical transparency can be retained in the extremely roughed metal film structure. Thereby, the findings could offer a feasible way to achieve a broadband transparent metal film structure and hold potential applications in transparent electrodes, touch screens and interactive electronics.