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A multi-wavelength channel distributed feedback laser diode array (DFB-LDA) for the low-cost and low-power consumption applications of WDM-based datacentre networks is reported. The gain spectrum and lasing wavelength of each channel are controlled by using selective area growth and E-beam lithography techniques, respectively. To reduce the operation current and parasitic capacitance of the proposed array, an etched mesa buried hetero-structure (EMBH) is introduced. From this study, it was found that an eight-channel 300 μm long λ/4-shifted DFB-LDA has a threshold current of 10 ± 1.5 mA and a side mode suppression ratio of over 50 dB at a current of 50 mA for all channels. A transmission test for this LDA showed a clear eye opening with a dynamic extinction ratio of over 4.5 dB at 10 Gb/s after a 2 km transmission.

It is shown that nonbiased optical bistability in an extremely shallow quantum well symmetric self-electro-optic effect device can be significantly improved by using an impedance-mismatched asymmetric Fabry-Perot scheme. The device in a simple layout shows nonbiased bistability width, ΔR, contrast, and Vop of ~53%, 17%, 3.7:1, and 0.9 V, respectively.

A a 1.55 /spl mu/m InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapour deposition is presented. Al/sub 2/O/sub 3//a-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through singlemode fibre are reported at a speed of 2.5 Gbit/s.

A novel reactive ion etching process for the InAlGaAs material system lattice matched to InP using BCl3/Cl2/CH4/H2 mixtures is presented. The etching speed is ~ 700 A/min, which remains approximately the same for all InAlGaAs compositions. The smoothness and the anisotropy of the etched wall appear to be very good. The etching characteristics of InP and mask materials are also reported.