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Start Over Author "Xiong, H. D." Publisher institution of engineering & technology
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1. Low-frequency noise and radiation response of buried oxides in SOI nMOS transistors.

Author

Xiong, H. D., Fleetwood, D. M., and Schwank, J. R.

Subjects
*METAL oxide semiconductor field-effect transistors, *SILICON, *PROTOTYPES, *DETECTORS, *ENERGY dissipation
Abstract

Investigates the back gate noise of irradiated silicon on insulator (SOI) metal oxide semiconductor. Indication of the advantages of SOI; Primary focus of most studies of the effects of radiation on MOS noise; Radiation effects on back gate noise.

Published
2004
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