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The channel length dependence of the stress-induced carrier velocity gain in linear and saturation operation regimes is investigated in uniaxially and biaxially stressed N-MOSFETs. Results indicate that, even though strained CMOS technology offers significant mobility gain (here 55% at maximum), saturation velocity effects strongly reduce its impact on the saturation region as manifested by the degradation of the velocity gain measured at high drain voltage. [ABSTRACT FROM AUTHOR]

A novel approach to von Neumann multiplexing is considered, in which NAND gates are replaced by Muller C-elements. The new method is developed as an application of maximum a-posteriori (MAP) estimation, and is shown to be superior to NAND multiplexing in systems where transient upsets are the dominant fault species. [ABSTRACT FROM AUTHOR]