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Start Over Descriptor "LOGIC circuits" Topic metal oxide semiconductor field-effect transistors Topic telecommunication Publisher institution of engineering & technology

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1 results on '"LOGIC circuits"'

1. Comparison of carrier velocity gain in uniaxially and biaxially strained N-MOSFETs.

Author

Benshidoum, T., Ghibaudo, G., and Boeuf, F.

Subjects
*COMPLEMENTARY metal oxide semiconductors, *DIGITAL electronics, *LOGIC circuits, *METAL oxide semiconductor field-effect transistors, *TELECOMMUNICATION
Abstract

The channel length dependence of the stress-induced carrier velocity gain in linear and saturation operation regimes is investigated in uniaxially and biaxially stressed N-MOSFETs. Results indicate that, even though strained CMOS technology offers significant mobility gain (here 55% at maximum), saturation velocity effects strongly reduce its impact on the saturation region as manifested by the degradation of the velocity gain measured at high drain voltage. [ABSTRACT FROM AUTHOR]

Published
2007
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