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Your search keyword '"Zhao, Zhibin"' showing total 80 results
Start Over Author "Zhao, Zhibin" Publisher institute of electrical and electronics engineers (ieee)
80 results on '"Zhao, Zhibin"'

12. Characterization of Gate-Oxide Degradation Location for SiC MOSFETs Based on the Split C-V Method Under Bias Temperature Instability Conditions

Author

Cai, Yumeng, Chen, Cong, Zhao, Zhibin, Sun, Peng, Li, Xuebao, Zhang, Manhong, Wang, Hui, Chen, Zhong, Nee, Hans-Peter, Cai, Yumeng, Chen, Cong, Zhao, Zhibin, Sun, Peng, Li, Xuebao, Zhang, Manhong, Wang, Hui, Chen, Zhong, and Nee, Hans-Peter

Abstract

Gate-oxide degradation has been one of the major reliability challenges of SiC mosfets. Comprehensive and accurate localization of gate-oxide degradation under bias temperature instability (BTI) conditions is important to improve the device reliability. The split C-V [gate-source capacitance C-GS (v(G)) and gate-drain capacitance C-GD (v(G))] method is proposed in this article to locate gate-oxide degradation. Moreover, a BTI automated characterization system integrated I-V and split C-V test is presented. The effect of gate-oxide degradation on threshold voltage and split C-V under dc and ac BTI conditions is investigated and the degradation location is analyzed. Furthermore, the degradation simulation is conducted with technology computer aided design (TCAD) to reveal the mechanism. The results show that the different parts of split C-V can characterize degradation location, the type, and energy level of traps. The acceptor traps near valence band and donor traps near conduction band cause gate-oxide degradation above the channel and junction field effect transistor (JFET) region in positive bias temperature instability (PBTI) and Negative Bias Temperature Instability (NBTI), respectively. In ac BTI, the gate-oxide degradation at the channel region is independent of v(G) polarity, while the opposite is true above JFET region. These findings help to improve the long-term operation reliability of gate oxide from the perspective of chip design and application., QC 20230505

Published
2023
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22. Stable Mode-Locked Operation With High Temperature Characteristics of a Two-Section InGaAs/GaAs Double Quantum Wells Laser

Author

Zhongliang Qiao, Lin Li, Xiang Li, Chongyang Liu, Hong Wang, Wanjun Wang, Xin Gao, Zaijin Li, Zhao Zhibin, Baoxue Bo, Jia Xubrian Sia, Yi Qu, School of Electrical and Electronic Engineering, and Temasek Laboratories @ NTU

Subjects
Semiconductor lasers, Materials science, Photon, General Computer Science, Semiconductor Lasers, General Engineering, Mode (statistics), Biasing, Laser, law.invention, Section (fiber bundle), quantum wells, Mode-locking, law, quantum well lasers, Electrical and electronic engineering [Engineering], Quantum Well Lasers, Saturation (graph theory), General Materials Science, lcsh:Electrical engineering. Electronics. Nuclear engineering, Atomic physics, Double quantum, laser modes, lcsh:TK1-9971
Abstract

A monolithic two-section InGaAs/GaAs double quantum wells (DQWs) mode-locked laser (MLL) emitting at 1.06~\mu \text{m} is demonstrated. Stable mode locking operation is achieved up to 80 °C. The fundamental repetition rate is at 9.51 GHz with a signal-to-noise ratio (SNR) of more than 55 dB, and up to the fourth harmonic at 38.04 GHz is observed. The characteristic temperature ( T_{0} ) of the laser and the influences of absorber bias voltage on T_{0} have been systematically investigated. From our findings, T_{0} shows a two-segment feature, and is slightly affected by the absorber bias voltage for photon saturation. National Research Foundation (NRF) Published version This work was supported in part by Finance science and technology project of Hainan Province under Grant ZDYF2020036, in part by the National Natural Science Foundation of China under Grant 61964007, Grant 61774024, Grant 61864002, and Grant 62064004; in part by the Hainan Provincial Natural Science Foundation of China under Grant 2018CXTD336; in part by the National Research Foundation of Singapore under Grant NRF-CRP12-2013-04; in part by the National Key Research and Development Project under Grant 2017YFB0405100; in part by the Jilin Province Science and Technology Development Plan under Grant 20190302007GX; and in part by the Young Talents Science and Technology Innovation Project of Hainan Association for Science and Technology under Grant QCXM201810.

Published
2021

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