127 results on '"Zhang, En-Xia"'
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2. Total-Ionizing-Dose Effects and Low-Frequency Noise in N-Type Carbon Nanotube Field-Effect Transistors With HfO₂ Gate Dielectrics
3. Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics
4. Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide
5. Total-Ionizing-Dose Effects on 3D Sequentially-Integrated FDSOI Ring Oscillators
6. Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes
7. Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs
8. Low-Frequency Noise and Deep Level Transient Spectroscopy in n-p-n Si Bipolar Junction Transistors Irradiated with Si Ions
9. Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors with SiO2 Oxygen-Penetration Layers
10. Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Towards Radiation-Tolerant Embedded Nonvolatile Memory
11. Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors
12. Effects of Interface Traps and Hydrogen on the Low-Frequency Noise of Irradiated MOS Devices
13. Total-Ionizing-Dose Effects at Ultra-High Doses in AlGaN/GaN HEMTs
14. TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses
15. Effects of Layer-to-Layer Coupling on the Total-Ionizing-Dose Response of 3-D-Sequentially Integrated FD-SOI MOSFETs
16. Radiation Effects in AlGaN/GaN HEMTs
17. Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs
18. Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices
19. Total-Ionizing-Dose Response of SiGe HBTs at Elevated Temperatures
20. Aging Effects and Latent Interface-Trap Buildup in MOS Transistors
21. Supply Voltage Dependence of Ring Oscillator Frequencies for Total Ionizing Dose Exposures for 7-nm Bulk FinFET Technology
22. A System-Level Modeling Approach for Simulating Radiation Effects in Successive-Approximation Analog-to-Digital Converters
23. Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs
24. 3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs
25. Variability in Total-Ionizing-Dose Response of Fourth-Generation SiGe HBTs
26. Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation
27. Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors
28. Single-Event-Induced Charge Collection in Ge-Channel pMOS FinFETs
29. Total Ionizing Dose Responses of 22-nm FDSOI and 14-nm Bulk FinFET Charge-Trap Transistors
30. Charge Trapping and Transconductance Degradation in Irradiated 3-D Sequentially Integrated FDSOI MOSFETs
31. Single-Event Transient Response of Vertical and Lateral Waveguide-Integrated Germanium Photodiodes
32. Scaling Effects on Single-Event Transients in InGaAs FinFETs
33. Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation
34. Sensitive-Volume Model of Single-Event Latchup for a 180-nm SRAM Test Structure
35. Total-Ionizing-Dose Effects in InGaAs MOSFETs With High-k Gate Dielectrics and InP Substrates
36. Total-Ionizing-Dose Effects on 3D Sequentially Integrated, Fully Depleted Silicon-on-Insulator MOSFETs
37. Charge Transport in Vertical GaN Schottky Barrier Diodes: A Refined Physical Model for Conductive Dislocations
38. The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture
39. Comparison of Sensitive Volumes Associated With Ion- and Laser-Induced Charge Collection in an Epitaxial Silicon Diode
40. Total-Ionizing-Dose Effects on InGaAs FinFETs With Modified Gate-stack
41. Polarization Dependence of Pulsed Laser-Induced SEEs in SOI FinFETs
42. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2Gate Dielectrics
43. Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics
44. Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si
45. Monte Carlo Simulation of Displacement Damage in Graphene
46. Pulsed-Laser Induced Single-Event Transients in InGaAs FinFETs on Bulk Silicon Substrates
47. Total Ionizing Dose Effects in 70-GHz Bandwidth Photodiodes in a SiGe Integrated Photonics Platform
48. Dose-Rate Dependence of the Total-Ionizing-Dose Response of GaN-Based HEMTs
49. Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS2-Interlayer-MoS2 Tunneling Junctions
50. Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs
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