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A plasma-based undoped-HfO2 FeFET (ferroelectric FET) with non-volatile memory characteristics is demonstrated. Modifying the O2 plasma period in plasma-enhanced atomic layer deposition (PE-ALD) is an effective approach to enhance the remnant polarization ( $\text{P}_{\text {r}}$ ) up to 2P $_{\text {r}} = 25\,\,\mu \text{C}$ /cm2 for the MFM (metal/ferroelectric/metal) structure with ferroelectric undoped-HfO2 thin films, and successful integration is implemented for the FeFET. The appropriate O2 vacancies ( $\text{V}_{\text {o}}^{{2}+}$ ) benefit the formation of the ferroelectric phase since they play the role of dopants and help orthorhombic phase (o-phase) formation during post-metal annealing (PMA). The $\text{V}_{\text {o}}^{{2}+}$ -rich undoped-HfO2 FeFET exhibits a memory window (MW) of 0.5 V, ${5} \times {10}^{{4}}$ switching endurance cycles, and higher than $10^{{4}}$ sec of data retention with $\text{V}_{\text {P/E}} = \pm 5$ V.

A plasma-based ferroelectric undoped HfO x capacitor is fabricated using plasma-enhanced atomic layer deposition (PE-ALD), and the multilevel characteristics of synaptic behavior are investigated. A gradual ferroelectric phase transition in the material is confirmed by grazing incidence X-ray diffraction (GI-XRD) for different O2 plasma periods. The metal–ferroelectric–metal (MFM) capacitor presents excellent remnant polarization ( ${\text{P}}_{r}$ ) up to $13~\mu \text{C}$ /cm2 and a switching endurance of more than 108 cycles. Superior small potentiation/depression nonlinearity ( $\alpha _{p}/\alpha _{d} = -0.08$ /−1.66 for voltage modulation stimulation) for synaptic training and almost symmetry training curve ( $\vert \alpha _{p}$ - $\alpha _{d}\vert $ ) are obtained. High stability under multilevel operation with five consecutive cycles of alternating potentiation and depression is exhibited without significant polarization variation for each training step (pulse).