1. High-temperature operation normal incident 256/spl times/256 InAs-GaAs quantum-dot infrared photodetector focal plane array
- Author
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Si-Chen Lee, San-Te Yang, Jiunn-Jye Luo, Shih-Yen Lin, Cheng-Der Chiang, Chih-Chang Shih, Ping-Kuo Weng, Yau-Tang Gau, and Shiang-Feng Tang
- Subjects
Physics ,Infrared ,business.industry ,Photodetector ,Specific detectivity ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Gallium arsenide ,chemistry.chemical_compound ,Cardinal point ,Optics ,chemistry ,Quantum dot ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Current density ,Voltage - Abstract
In this letter, a 256/spl times/256 midwavelength infrared focal plane array (FPA) based on 30-period InAs-GaAs quantum-dot infrared photodetectors (QDIPs) is fabricated. The demonstrated original real-time nonuniformity corrected thermal images of hot soldering iron head with 30-Hz frame rate for the FPA are observed. Without additional light-coupling scheme, the QDIP FPA module is first operated at temperatures higher than 135 K under normal-incident condition with a 30/spl deg/ field of view and f/2 optics. For single device performances, a similar QDIP device with a 30-period InAs-GaAs QD structure is fabricated under the same processing procedure. High specific detectivity D/sup */ 1.5/spl times/10/sup 10/ cm/spl middot/Hz/sup 1/2//W and low noise current density 5.3/spl times/10/sup -13/ A/Hz/sup 1/2/ at applied voltage 0.3 V are observed.
- Published
- 2006
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