33 results on '"Xu, Guangwei"'
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2. Vertical Vertical β-Ga₂O₃ Power Diodes: From Interface Engineering to Edge Termination
3. Modeling the Thermal Characteristics of Stacked 2T0C Memory Array Based on InGaZnO4 Thin-Film Transistors
4. Fast Speed Ga2O3 Solar-Blind Photodetectors With Low Temperature Process Engineering
5. Effect of Current Sharing by Metal Core on Reducing Hot-Spot Temperature of Spiral Coated Conductors
6. Demonstration of β-Ga2O3 Heterojunction Gate Field-Effect Rectifier
7. 702.3 A·cm⁻²/10.4 mΩ·cm² β-Ga₂O₃ U-Shape Trench Gate MOSFET With N-Ion Implantation
8. Self-Powered p-NiO/n-Ga2O3 Heterojunction Solar-Blind Photodetector With Record Detectivity and Open Circuit Voltage
9. Vertical $\beta$-Ga$_{\text{2}}$O$_{\text{3}}$ Power Transistors: Fundamentals, Designs, and Opportunities
10. The Effects of Postdeposition Anneal and Postmetallization Anneal on Electrical Properties of TiN/ZrO2/TiN Capacitors
11. Superior Performance $\beta$-Ga$_\text{2}$O$_{\text{3}}$ Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier
12. 2.7 kV Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes with Self-Aligned Mesa Termination
13. Self-Powered a-SnOx/c-Ga2O3 pn Heterojunction Solar-Blind Photodetector with High Responsivity and Swift Response Speed
14. Improved Vertical $\beta $-Ga$_{\text{2}}$O$_{\text{3}}$ Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension
15. Pt/ZnGa₂O₄ Schottky Barrier Diodes Fabricated by Using Single Crystal n-ZnGa₂O₄ (111) Substrates
16. Selective High-Resistance Zones Formed by Oxygen Annealing for -GaO Schottky Diode Applications
17. Nonuniform Mechanism for Positive and Negative Bias Stress Instability in β-Ga2O3 MOSFET
18. Current-Sharing Between Filaments and Voltage – Current Characteristics of Copper-Plated Multifilament Coated Conductors
19. Experimental Investigation on Threshold Voltage Instability for β-Ga2O3 MOSFET Under Electrical and Thermal Stress
20. Correlation Between Electrical Performance and Gate Width of GaN-Based HEMTs
21. Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes Without Edge Termination
22. -GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter
23. Positive-Bias Stress Stability of Solution-Processed Oxide Semiconductor Thin-Film Transistor
24. High-Performance β-Ga2O3 Solar-Blind Photodetector With Extremely Low Working Voltage
25. Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study
26. Double-Barrier β-Ga2O3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current
27. High-Detectivity β-Ga₂O₃ Microflake Solar-Blind Phototransistor for Weak Light Detection
28. Field-Dependent Mobility Enhancement and Contact Resistance in a-IGZO TFTs
29. Room Temperature-Processed a-IGZO Schottky Diode for Rectifying Circuit and Bipolar 1D1R Crossbar Applications
30. Anomalous Positive Bias Stress Instability in MoS2 Transistors With High-Hydrogen-Concentration SiO2 Gate Dielectrics
31. A Surface Potential-Based Gate-Leakage Current Model for Organic Thin-Film Transistors
32. An Improved Cut-Off Frequency Model With a Modified Small-Signal Equivalent Circuit in Graphene Field-Effect Transistors
33. A Novel Wavelet-Based Approach for Predicting Nucleosome Positions Using DNA Structural Information
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