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1. Irradiation Hardened p-GaN HEMTs Enabling 558 V Single-Event Hardness at 75.7 MeV·cm2/mg and 95% Conversion Efficiency at 300 W/500 kHz

2. High-V TH E-Mode GaN HEMTs With Robust Gate-Bias-Dependent V TH Stability Enabled by Mg-Doped p-GaN Engineering

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