18 results on '"Witters, Liesbeth"'
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2. Effects of Negative-Bias-Temperature-Instability on Low-Frequency Noise in SiGe ${p}$ MOSFETs
3. Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes
4. GR-Noise Characterization of Ge pFinFETs With STI First and STI Last Processes
5. Low-Resistance Titanium Contacts and Thermally Unstable Nickel Germanide Contacts on p-Type Germanium
6. Charge Collection Mechanisms of Ge-Channel Bulk $p$ MOSFETs
7. Total Ionizing Dose Effects on Ge Channel $p$FETs with Raised ${\rm Si}_{0.55}{\rm Ge}_{0.45}$ Source/Drain
8. Activation Energies for Oxide- and Interface-Trap Charge Generation Due to Negative-Bias Temperature Stress of Si-Capped SiGe-pMOSFETs
9. TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs
10. High-Performance Si0.45Ge0.55Implant-Free Quantum Well pFET With Enhanced Mobility by Low-Temperature Process and Transverse Strain Relaxation
11. Spike Anneal Peak Temperature Impact on 1T-DRAM Retention Time
12. Endurance of One Transistor Floating Body RAM on UTBOX SOI
13. NBTI Reliability of SiGe and Ge Channel pMOSFETs With $ \hbox{SiO}_{2}/\hbox{HfO}_{2}$ Dielectric Stack
14. SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices—Part I: NBTI
15. SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices—Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues
16. Layout Scaling of $\hbox{Si}_{1-x}\hbox{Ge}_{x} \hbox{-Channel}$ pFETs
17. The Influence of TiN Thickness and $\hbox{SiO}_{2}$ Formation Method on the Structural and Electrical Properties of $\hbox{TiN}/ \hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stacks
18. Demonstration of Asymmetric Gate-Oxide Thickness Four-Terminal FinFETs Having Flexible Threshold Voltage and Good Subthreshold Slope
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