26 results on '"Sun, Qing‐Qing"'
Search Results
2. Carrier Stored Trench-Gate Bipolar Transistor With Stepped Split Trench-Gate Structure
3. A Transistor-Level DFF Based on FinFET Technology for Low Power Integrated Circuits
4. Ultralow-Power Synaptic Transistor Based on Wafer-Scale MoS2 Thin Film for Neuromorphic Application
5. Suppression of Stress-Induced Defects in FinFET by Implantation and STI Co-Optimization
6. Experimental Validation of Depolarization Field Produced Voltage Gains in Negative Capacitance Field-Effect Transistors
7. Incomplete Dipoles Flipping Produced Near Hysteresis-Free Negative Capacitance Transistors
8. Thickness Dependence of Low-Frequency Noise in MoS2 Field-Effect Transistors With Enhanced Back-Gate Control
9. Nonideality of Negative Capacitance Ge Field-Effect Transistors Without Internal Metal Gate
10. Stateful Logic Operations Implemented With Graphite Resistive Switching Memory
11. Negative Differential Resistance in Negative Capacitance FETs
12. Effects of the Variation of ${V}_{\text {GS}}$ Sweep Range on the Performance of Negative Capacitance FETs
13. Negative Capacitance Ge PFETs for Performance Improvement: Impact of Thickness of HfZrOx
14. Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrO x
15. Comparative Study of Negative Capacitance Ge pFETs With HfZrOxPartially and Fully Covering Gate Region
16. Correlation of Gate Capacitance with Drive Current and Transconductance in Negative Capacitance Ge PFETs
17. Ferroelectric Negative Capacitance GeSn PFETs With Sub-20 mV/decade Subthreshold Swing
18. Resistive Switching and Synaptic Behaviors of TaN/Al2O3/ZnO/ITO Flexible Devices With Embedded Ag Nanoparticles
19. Complementary Resistive Switching in Flexible RRAM Devices
20. Design of U-Shape Channel Tunnel FETs With SiGe Source Regions
21. Novel Zn-Doped ${\rm Al}_{2}{\rm O}_{3}$ Charge Storage Medium for Light-Erasable In–Ga–Zn–O TFT Memory
22. Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals
23. A Novel 1T-1D DRAM Cell for Embedded Application
24. Controllable Filament With Electric Field Engineering for Resistive Switching Uniformity
25. Enhancement of Resistive Switching Characteristics in $ \hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM With Embedded Ruthenium Nanocrystals
26. Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories With Superior Performance
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.