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ZnO bilayer films were deposited by low-pressure chemical vapor deposition in a single process step by controlling the differential doping of the nucleation and bulk parts of the layers. The resulting 2-μm-thick films are characterized by low free-carrier absorption and electron mobility over 40 cm2 /Vs. They, therefore, combine high transparency in the infrared region and moderate sheet resistance that can be lowered below 20 Ω/sq. These properties make ZnO bilayers ideal candidates as electrodes for the development of micromorph thin-film solar cells with enhanced photogenerated current. The potential of such bilayer front electrodes for a further power improvement and cost reduction of industrial micromorph tandem modules is currently investigated at Oerlikon Solar. The first experiments already show a promising gain in the bottom μc-Si:H cell photogenerated current compared with the current generated with modules deposited on standard uniformly doped ZnO single-layer front contacts.

Optimized transparent conductive oxide front electrodes are vital to further increase the efficiency of thin film silicon solar devices. We report details on the fabrication of multiscale textured zinc oxide substrates and their implementation in amorphous silicon/microcrystalline silicon tandem (micromorph) devices. Such substrates allow separate optimization of light trapping in the top and bottom cells and efficient decoupling of transparency and conduction. We show in particular the need for sharp nanoscale texturing for antireflection and light trapping in the top cell. We also show that smooth micrometer scale texturing can efficiently improve large wavelength light management without degrading the quality of the silicon material grown on the substrate. By combining the appropriate morphologies high currents can be reached in both the top and bottom subcells while conserving the optimal electrical properties of the solar cells. © 2011 IEEE.

We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab-like WGs propagation losses are below 3 dB/mm and independent of light polarization. For 2.6-mum-wide WGs the propagation losses in the 1.5- to 1.58-mum spectral region are as low as 1.8 and 4.9 dB/mm for transverse-electric- and transverse-magnetic-polarization, respectively. The losses are attributed to the sidewall roughness and can be further reduced by the optimization of the etching process.