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Your search keyword '"Ryder, Landen D."' showing total 10 results
Start Over Author "Ryder, Landen D." Publisher institute of electrical and electronics engineers (ieee)
10 results on '"Ryder, Landen D."'

3. Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation

Author

Ryder, Kaitlyn L., primary, Ryder, Landen D., additional, Sternberg, Andrew L., additional, Kozub, John A., additional, Zhang, En Xia, additional, LaLumondiere, Stephen D., additional, Monahan, Daniele M., additional, Bonsall, Jeremy P., additional, Khachatrian, Ani, additional, Buchner, Stephen P., additional, McMorrow, Dale, additional, Hales, Joel M., additional, Zhao, Yuanfu, additional, Wang, Liang, additional, Wang, Chuanmin, additional, Weller, Robert A., additional, Schrimpf, Ronald D., additional, Weiss, Sharon M., additional, and Reed, Robert A., additional

Published
2021
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5. Scaling Effects on Single-Event Transients in InGaAs FinFETs

Author

Massachusetts Institute of Technology. Microsystems Technology Laboratories, Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Gong, Huiqi, Ni, Kai, Zhang, En Xia, Sternberg, Andrew L., Kozub, John A., Ryder, Kaitlyn L., Keller, Ryan F., Ryder, Landen D., Weiss, Sharon M., Weller, Robert A., Alles, Michael L., Reed, Robert A., Fleetwood, Daniel M., Schrimpf, Ronald D., Vardi, Alon, del Alamo, Jesus A, Massachusetts Institute of Technology. Microsystems Technology Laboratories, Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Gong, Huiqi, Ni, Kai, Zhang, En Xia, Sternberg, Andrew L., Kozub, John A., Ryder, Kaitlyn L., Keller, Ryan F., Ryder, Landen D., Weiss, Sharon M., Weller, Robert A., Alles, Michael L., Reed, Robert A., Fleetwood, Daniel M., Schrimpf, Ronald D., Vardi, Alon, and del Alamo, Jesus A

Abstract

The single-event-transient response of InGaAs FinFETs with different fin widths is examined using pulsed-laser and heavy-ion irradiation. Devices with wider fins collect more charge in both environments. Quantum-well structures confine charge collection in the channel, and determine the sensitive volume. Simulations show that the charge density produced by irradiation is similar for devices with different fin widths, but more charge is collected by wider fin devices due to the larger channel volume. Charge accumulated in the buffer and substrate layers modulates the body potential, altering the degree of back-gate control, leading to additional effects associated with charge accumulation in wider fin devices. Optical simulations for a model system suggest that optical phenomena in the fins should be considered for laser testing. These include optical interference, plasmonic enhancement at the metal-dielectric interfaces, and enhanced electron-hole pair recombination due to multiple reflections in multigate devices with nanoscale dimensions.

Published
2020

6. Simulation of Pulsed Laser-Induced Testing in Microelectronic Devices

Author

Ryder, Landen D., primary, Ryder, Kaitlyn L., additional, Sternberg, Andrew L., additional, Kozub, John A., additional, Khachatrian, Ani, additional, Buchner, Steven P., additional, McMorrow, Dale, additional, Hales, Joel M., additional, Zhao, Yuanfu, additional, Wang, Liang, additional, Wang, Chuanmin, additional, Weller, Robert A., additional, Schrimpf, Ronald D., additional, Weiss, Sharon M., additional, and Reed, Robert A., additional

Published
2021
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7. Comparison of Sensitive Volumes Associated With Ion- and Laser-Induced Charge Collection in an Epitaxial Silicon Diode

Author

Ryder, Kaitlyn L., primary, Zhao, Yuanfu, additional, Wang, Liang, additional, Wang, Chuanmin, additional, Weller, Robert A., additional, Schrimpf, Ronald D., additional, Weiss, Sharon M., additional, Reed, Robert A., additional, Ryder, Landen D., additional, Sternberg, Andrew L., additional, Kozub, John A., additional, Zhang, En Xia, additional, Khachatrian, Ani, additional, Buchner, Steven P., additional, Mcmorrow, Dale P., additional, and Hales, Joel M., additional

Published
2020
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8. Polarization Dependence of Pulsed Laser-Induced SEEs in SOI FinFETs

Author

Ryder, Landen D., primary, Ryder, Kaitlyn L., additional, Sternberg, Andrew L., additional, Kozub, John A., additional, Gong, Huiqi, additional, Zhang, En Xia, additional, Linten, Dimitri, additional, Mitard, Jerome, additional, Weller, Robert A., additional, Schrimpf, Ronald D., additional, Weiss, Sharon M., additional, and Reed, Robert A., additional

Published
2020
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9. Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments

Author

Johnson, Robert A., primary, Witulski, Arthur F., additional, Ball, Dennis R., additional, Galloway, Kenneth F., additional, Sternberg, Andrew L., additional, Zhang, Enxia, additional, Ryder, Landen D., additional, Reed, Robert A., additional, Schrimpf, Ronald D., additional, Kozub, John A., additional, Lauenstein, Jean-Marie, additional, and Javanainen, Arto, additional

Published
2019
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10. Scaling Effects on Single-Event Transients in InGaAs FinFETs

Author

Gong, Huiqi, primary, Ni, Kai, additional, Zhang, En Xia, additional, Sternberg, Andrew L., additional, Kozub, John A., additional, Ryder, Kaitlyn L., additional, Keller, Ryan F., additional, Ryder, Landen D., additional, Weiss, Sharon M., additional, Weller, Robert A., additional, Alles, Michael L., additional, Reed, Robert A., additional, Fleetwood, Daniel M., additional, Schrimpf, Ronald D., additional, Vardi, Alon, additional, and del Alamo, Jesus A., additional

Published
2018
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