62 results on '"Long, Shibing"'
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2. Vertical Vertical β-Ga₂O₃ Power Diodes: From Interface Engineering to Edge Termination
3. Modeling the Thermal Characteristics of Stacked 2T0C Memory Array Based on InGaZnO4 Thin-Film Transistors
4. Fast Speed Ga2O3 Solar-Blind Photodetectors With Low Temperature Process Engineering
5. Demonstration of β-Ga2O3 Heterojunction Gate Field-Effect Rectifier
6. 702.3 A·cm⁻²/10.4 mΩ·cm² β-Ga₂O₃ U-Shape Trench Gate MOSFET With N-Ion Implantation
7. Self-Powered p-NiO/n-Ga2O3 Heterojunction Solar-Blind Photodetector With Record Detectivity and Open Circuit Voltage
8. Write–Verify-Free MLC RRAM Using Nonbinary Encoding for AI Weight Storage at the Edge
9. Vertical $\beta$-Ga$_{\text{2}}$O$_{\text{3}}$ Power Transistors: Fundamentals, Designs, and Opportunities
10. The Effects of Postdeposition Anneal and Postmetallization Anneal on Electrical Properties of TiN/ZrO2/TiN Capacitors
11. Superior Performance $\beta$-Ga$_\text{2}$O$_{\text{3}}$ Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier
12. 2.7 kV Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes with Self-Aligned Mesa Termination
13. Self-Powered a-SnOx/c-Ga2O3 pn Heterojunction Solar-Blind Photodetector with High Responsivity and Swift Response Speed
14. Improved Vertical $\beta $-Ga$_{\text{2}}$O$_{\text{3}}$ Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension
15. Pt/ZnGa₂O₄ Schottky Barrier Diodes Fabricated by Using Single Crystal n-ZnGa₂O₄ (111) Substrates
16. Selective High-Resistance Zones Formed by Oxygen Annealing for -GaO Schottky Diode Applications
17. Nonuniform Mechanism for Positive and Negative Bias Stress Instability in β-Ga2O3 MOSFET
18. Experimental Investigation on Threshold Voltage Instability for β-Ga2O3 MOSFET Under Electrical and Thermal Stress
19. Correlation Between Electrical Performance and Gate Width of GaN-Based HEMTs
20. Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes Without Edge Termination
21. One Transistor One Electrolyte-Gated Transistor for Supervised Learning in SNNs
22. -GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter
23. Positive-Bias Stress Stability of Solution-Processed Oxide Semiconductor Thin-Film Transistor
24. High-Performance β-Ga2O3 Solar-Blind Photodetector With Extremely Low Working Voltage
25. Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study
26. Double-Barrier β-Ga2O3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current
27. High-Detectivity β-Ga₂O₃ Microflake Solar-Blind Phototransistor for Weak Light Detection
28. High-Voltage ($\overline{\text{2}}01$ ) $\beta$ -Ga2O3 Vertical Schottky Barrier Diode With Thermally-Oxidized Termination
29. High-Performance Metal-Organic Chemical Vapor Deposition Grown $\varepsilon$ -Ga2O3 Solar-Blind Photodetector With Asymmetric Schottky Electrodes
30. Ultrahigh-Performance Solar-Blind Photodetector Based on $\alpha$ -Phase- Dominated Ga2O3 Film With Record Low Dark Current of 81 fA
31. Fast Switching $\beta$ -Ga2O3Power MOSFET With a Trench-Gate Structure
32. Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure
33. Memory Switching and Threshold Switching in a 3D Nanoscaled NbOX System
34. Enhancement-Mode $\beta$ -Ga2O3 Metal–Oxide–Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio
35. Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1−XO2 Thin Films
36. Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory
37. Unveiling the Switching Mechanism of a TaOx/HfO2 Self-Selective Cell by Probing the Trap Profiles With RTN Measurements
38. Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application
39. Schottky Barrier Rectifier Based on (100) $\beta$ -Ga2O3 and its DC and AC Characteristics
40. Investigation of Retention Behavior of TiOx/Al2O3 Resistive Memory and Its Failure Mechanism Based on Meyer–Neldel Rule
41. An Artificial Neuron Based on a Threshold Switching Memristor
42. Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2
43. Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM
44. Uniformity and Retention Improvement of TaOx-Based Conductive Bridge Random Access Memory by CuSiN Interfacial Layer Engineering
45. Emulating Short-Term and Long-Term Plasticity of Bio-Synapse Based on Cu/a-Si/Pt Memristor
46. A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured With the Width-Adjusting Pulse Operation Method
47. Degradation of Gate Voltage Controlled Multilevel Storage in One Transistor One Resistor Electrochemical Metallization Cell
48. Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory
49. Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory With Single Filament Formation
50. Uniformity Improvement in 1T1R RRAM With Gate Voltage Ramp Programming
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