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1. Preparation of Large Grain Size Polysilicon Using Long-Pulse Green Laser Annealing for 3-D Integration Technology

15. A Novel Method to Reduce Specific Contact Resistivity of TiSix/n+-Si Contacts by Employing an In-Situ Steam Generation Oxidation Prior to Ti Silicidation

17. Experimental Investigation of As Preamorphization Implant on Electrical Property of Ti-Based Silicide Contacts

18. Investigation of Ultrathin Ni Germanosilicide for Advanced pMOS Contact Metallization

19. Specific Contact Resistivity Improvement by As Preamorphization Implantation for Ti-Based Ohmic Contacts on n+-Si

20. Band-Edge Work Function Obtained by Plasma Doping TiN Metal Gate for nMOS Device Application

21. Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation

22. Ion-Implanted TiN Metal Gate With Dual Band-Edge Work Function and Excellent Reliability for Advanced CMOS Device Applications

23. Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short-Channel Effects and Enhance Device Performance

24. Mitigation of Reverse Short-Channel Effect With Multilayer TiN/Ti/TiN Metal Gates in Gate Last PMOSFETs

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