1. InAlN/GaN HEMT on Si With fmax = 270 GHz
- Author
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Lars Gundlach, John Q. Xiao, Hang Chen, Peng Cui, Guangyang Lin, Meng Jia, Jie Zhang, and Yuping Zeng
- Subjects
010302 applied physics ,Materials science ,Annealing (metallurgy) ,Transconductance ,Transmission line measurement ,Analytical chemistry ,Gallium nitride ,High-electron-mobility transistor ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,chemistry.chemical_compound ,chemistry ,0103 physical sciences ,Electrical and Electronic Engineering ,Forming gas ,Ohmic contact ,Sheet resistance - Abstract
Device surface properties are critical for its performance such as channel electron density, leakage current, subthreshold swing (SS), and noise in gallium nitride high-electron-mobility transistors (HEMTs). In this article, the improved surface property of InAlN/GaN HEMTs with forming gas (FG, 5% H2, and 95% N2) annealing is demonstrated. X-ray photoelectron spectra (XPS) show that the number of Ga–O bonds decreases while that of the Ga–N bonds increases, an indication of the surface native oxide removal after FG annealing. Compared with N2 annealing, an increase of two-dimensional electron gas (2DEG) electron density with FG annealing is determined by both energy band simulation and capacitance–voltage measurement. Transmission line measurement (TLM) shows that N2 annealing offers a lower ohmic contact resistance ( ${R}_{\text {C}}$ ) while FG annealing features a lower sheet resistance ( ${R}_{\text {sheet}}$ ). Herein, a FG/N2 two-step ohmic contact annealing is developed to achieve a SS of 110 mV/dec, a transconductance ( ${g}_{\text {m}}$ ) peak of 415 mS/mm, a record low drain-induced barrier lowing (DIBL) of 65 mV/V, and a record high power gain cutoff frequency ( ${f}_{\text {max}}$ ) of 270 GHz on a 50-nm InAlN/GaN HEMT on Si.
- Published
- 2021