1. P-I-N CdTe Gamma Ray Detectors by Liquid Phase Epitaxy (LPE)
- Author
-
C. Fuller, M. Khoshnevisan, C. I. Westmark, F. J. Ryan, G. L. Bostrup, S. H. Shin, G. T. Niizawa, and J. G. Pasko
- Subjects
Nuclear and High Energy Physics ,Materials science ,business.industry ,Schottky barrier ,Schottky diode ,Heterojunction ,Epitaxy ,Photodiode ,law.invention ,Semiconductor detector ,Nuclear Energy and Engineering ,law ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Ohmic contact ,Diode - Abstract
A new device concept for CdTe gamma ray detectors has been demonstrated using p+(HgCdTe)-n(CdTe)-n+ (HgCdTe) diode structures. Both P+ and n+ Hg0.25Cd0.75Te epilayers were grown by the liquid phase epitaxy (LPE) technique on semi-insulating CdTe sensor elements. The LPE grown P-I-N structure offers potential advantages for p-n junction and ohmic contact formation over standard ion implanted diodes or Schottky barrier devices. Detectors with active areas of 2 mm2 were fabricated. Resolutions of 10 KeV were obtained for the 122 KeV gamma peak of Co57 at room temperature.
- Published
- 1985
- Full Text
- View/download PDF