352 results on '"Hao Yue"'
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2. Electrolyte-Gated Flexible MoS₂ Synaptic Transistors With Short-Term Plasticity
3. Preparation of High Conductivity Hydrogenated Silicon-Doped Diamond and MOSFET
4. Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure
5. Evolution of Neuron-Like Spiking Response and Spike-Based All-Optical XOR Operation in a DFB With Saturable Absorber
6. Experimental Demonstration of Delay-Weight Learning and Pattern Classification With a FP-SA-Based Photonic Spiking Neuron Chip
7. Influence of Transverse Geometry of Sidewall Gates on Characteristics of AlGaN/GaN Fin-HEMTs
8. Surface Pretreatment by Low-Temperature O2 Gas Annealing for Performance Improvement in Pt/β-Ga2O3 Schottky Barrier Diodes
9. Energy-Efficient Reconfigurable Transistor Achieving Sub-Nanojoule Consumption Per Programming Event
10. High-Efficiency Millimeter-Wave Enhancement-Mode Ultrathin-Barrier AlGaN/GaN Fin-HEMT for Low-Voltage Terminal Applications
11. Conductivity-Modulated GaN-Based Ultraviolet Light-Emitting Diodes With Broadening Current Spreading Capability
12. High-Temperature Atomized Water-Assisted Reconstruction of CsPbBr3 Wafers for High-Performance X-Ray Detection
13. High Power Linearity and Low Leakage Current of AlN/GaN/InGaN Coupling Channel HEMTs with N2O Oxidation Treatment
14. Wafer-Scale GaN-Si(100) Monolithic Heterogeneous Integration Inverters With Improved Output Voltage Swing and Fast Switching Capability by Transfer Printing and Self-Aligned Etching Technology
15. Photoelectric In-memory Logic and Computing Achieved in HfO2-based Ferroelectric Optoelectronic Memcapacitors
16. Improving the Manufacturability of Low-Temperature GaN Ohmic Contact by Blocking the Fluorine Ion Injection
17. Investigation of β-Ga2O3 MOSFET With Double Drift Layers by TCAD Simulation
18. p-GaN Gate HEMTs on 6-inch Sapphire by CMOS-Compatible Process: A Promising Game Changer for Power Electronics
19. Sampled Output Data-Driven Based Adaptive Observer Design and Off-Line Fault Estimation for T-S Fuzzy Descriptor Systems
20. Influence of the Splicing Interface of the Mosaic Single Crystal Diamond on the H-Diamond Field-Effect Transistor Performance
21. InAlN/GaN MISHEMTs With 120 nm T-Shape Recessed Gates on Silicon With Excellent mm-Wave Noise Performance
22. Depolarization Field Engineered Ferroelectric Mechanical Transistor With 0.3-Volts V DD
23. The Impact of Anode p+ Islands Layout on the Performance of NiOx/β-Ga₂O₃ Hetero-Junction Barrier Schottky Diodes
24. Experimental Study and Characterization on the Thermo-Electro Multiphysics Coupling Failure of GaN HEMTs Under High-Power Microwave Pulse
25. InAlN/GaN MISHEMTs with 120 nm T-Shape Recessed Gates on Silicon with Excellent mm-Wave Noise Performance
26. Hardware Implementation of Multi-Layer Photonic Spiking Neural Network With Three Cascaded Photonic Spiking Neurons
27. An Improved MPC With Reduced CMV and Current Distortion for PMSM Drives Under Variable DC-Bus Voltage Condition in Electric Vehicles
28. Physically Transient Threshold Switching Devices for Image Compression and Encryption Computing
29. Unique Bias Stress Instability of Heterogeneous Ga2O3-on-SiC MOSFET
30. Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO2 Capacitors
31. HfO2–ZrO2 Superlattice Ferroelectric Field-Effect Transistor With Improved Endurance and Fatigue Recovery Performance
32. Effect of Hydrogen on Electrical Performance of Pt/Au β-Ga2O3 (001) Schottky Barrier Diodes
33. High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications
34. High Efficiency Deep Ultraviolet Light-Emitting Diodes With Polarity Inversion of Hole Injection Layer
35. A Hybrid-Integrated Photonic Spiking Neural Network Framework Based on an MZI Array and VCSELs-SA
36. HfO₂-Based Ferroelectric Optoelectronic Memcapacitors
37. High Linear and Temperature Insensitive GaAs Power Amplifier Operating at 3.3–3.6 GHz Using a Multi-Feedback Branch Bias Circuit
38. Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing
39. Low Thermal Budget Reconfigurable Fully Depleted Silicon on Insulator Field-Effect-Transistors With Embedded Boolean Logic
40. Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Amorphous Ga₂O₃ Based Resistive Random Access Memory Device
41. Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V
42. High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring
43. High-Performance AlN/GaN MISHEMTs on Si With in-situ SiN Enhanced Ohmic Contacts for Mobile mm-Wave Front-End Applications
44. High Efficiency Over 70% at 3.6-GHz InAlN/GaN HEMT Fabricated by Gate Recess and Oxidation Process for Low-Voltage RF Applications
45. The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs
46. Tri-gate Normally-off AlN/GaN HEMTs with 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at Vd=12 V
47. Optimization of dual field plate AlGaN/GaN HEMTs using artificial neural networks and particle swarm optimization algorithm
48. Numerical Investigation of Laterally Downscaled Hydrogen-Terminated Diamond FETs
49. Effects of Neutron Irradiation on Electrical Performance of $\beta $-Ga$_{\text{2}}$O$_{\text{3}}$ Schottky Barrier Diodes
50. Efficient Barrett Modular Multiplication Based on Toom-Cook Multiplication
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