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Your search keyword '"Fenning, David P."' showing total 11 results
Start Over Author "Fenning, David P." Publisher institute of electrical and electronics engineers (ieee)
11 results on '"Fenning, David P."'

2. Glass vs. Backsheet: Deconvoluting the Role of Moisture in Power Loss in Silicon Photovoltaics With Correlated Imaging During Accelerated Testing

Author

Kumar, Rishi E., primary, Von Gastrow, Guillaume, additional, Theut, Nicholas, additional, Jeffries, April M., additional, Sidawi, Tala, additional, Ha, Angel, additional, DePlachett, Flavia, additional, Moctezuma-Andraca, Hugo, additional, Donaldson, Seth, additional, Bertoni, Mariana I., additional, and Fenning, David P., additional

Published
2022
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4. Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering

Author

Massachusetts Institute of Technology. Department of Mechanical Engineering, Laine, Hannu, Morishige, Ashley Elizabeth, Bertoni, Mariana I, Buonassisi, Anthony, Fenning, David P, Savin, Hele Irene, Vahanissi, Ville, Liu, Zhengjun, Huang, Haibing, Magana, Ernesto, Khelifati, Nabil, Husein, Sebastian, Lai, Barry, Bouhafs, Djoudi, Massachusetts Institute of Technology. Department of Mechanical Engineering, Laine, Hannu, Morishige, Ashley Elizabeth, Bertoni, Mariana I, Buonassisi, Anthony, Fenning, David P, Savin, Hele Irene, Vahanissi, Ville, Liu, Zhengjun, Huang, Haibing, Magana, Ernesto, Khelifati, Nabil, Husein, Sebastian, Lai, Barry, and Bouhafs, Djoudi

Abstract

Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer., United States. Department of Energy. Office of Basic Energy Sciences (Contract No. DE-AC02-06CH11357), National Science Foundation (U.S.) (CA No. EEC-1041895), Finnish Cultural Foundation, Fulbright-Technology Industries of Finland Grant, University of California, San Diego. Start Up Funds

Published
2018

11. Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering

Author

N. Khelifati, Sebastian Husein, Zhengjun Liu, Haibing Huang, Ville Vähänissi, Mariana I. Bertoni, Hele Savin, Hannu S. Laine, Ashley E. Morishige, D. Bouhafs, David P. Fenning, Barry Lai, Ernesto Magana, Tonio Buonassisi, Massachusetts Institute of Technology. Department of Mechanical Engineering, Laine, Hannu, Morishige, Ashley Elizabeth, Bertoni, Mariana I, Buonassisi, Anthony, Fenning, David P, and Savin, Hele Irene

Subjects
Materials science, Silicon, ta114, Precipitation (chemistry), business.industry, Physics::Instrumentation and Detectors, chemistry.chemical_element, 02 engineering and technology, Chemical vapor deposition, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, chemistry, Getter, Photovoltaics, Impurity, Optoelectronics, Physics::Accelerator Physics, Diffusion (business), 0210 nano-technology, business, Common emitter
Abstract

Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer., United States. Department of Energy. Office of Basic Energy Sciences (Contract No. DE-AC02-06CH11357), National Science Foundation (U.S.) (CA No. EEC-1041895), Finnish Cultural Foundation, Fulbright-Technology Industries of Finland Grant, University of California, San Diego. Start Up Funds

Published
2016

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