53 results on '"Cristoloveanu, S."'
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2. Improved Retention Characteristics of Z2-FET Employing Half Back-Gate Control
3. Memory Operation of Z²-FET Without Selector at High Temperature
4. Optimization of Photoelectron In-Situ Sensing Device in FD-SOI
5. Deep-Depletion Effect in SOI Substrates and its Application in Photodetectors With Tunable Responsivity and Detection Range
6. Memory Operations of Zero Impact Ionization, Zero Subthreshold Swing FET Matrix Without Selectors
7. Dynamic Coupling Effect in Z2-FET and Its Application for Photodetection
8. Evidence of Supercoupling Effect in Ultrathin Silicon Layers Using a Four-Gate MOSFET
9. Novel Bipolar-Enhanced Tunneling FET With Simulated High On-Current
10. Mobility Enhancement by Back-Gate Biasing in Ultrathin SOI MOSFETs With Thin BOX
11. A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration
12. High-$\kappa$ and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances
13. Total Ionizing Dose Effects on Triple-Gate FETs
14. Analytical modeling of the two-dimensional potential distribution and threshold voltage of the SOI four-gate transistor
15. Low-frequency noise in SOI four-gate transistors
16. Total ionizing dose effects on deca-nanometer fully depleted SOI devices
17. Possible Influence of the Schottky Contacts on the Characteristics of Ultrathin SOI Pseudo-MOS Transistors
18. Detailed Investigation of Geometrical Factor for Pseudo-MOS Transistor Technique
19. Investigation of the Four-Gate Action in<tex>$hbox G^4$</tex>-FETs
20. Silicon-on-Nothing MOSFETs: Performance, Short-Channel Effects, and Backgate Coupling
21. Charge separation techniques for irradiated pseudo-MOS SOI transistors
22. Ultimately thin double-gate SOI MOSFETs
23. Reduced floating body effects in narrow channel SOI MOSFETs
24. Back-gate and series resistance effects in LDMOSFETs on SOI
25. A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications
26. Recombination current modeling and carrier lifetime extraction in dual-gate fully-depleted SOI devices
27. Carrier lifetime extraction in fully depleted dual-gate SOI devices
28. SOI: a metamorphosis of silicon
29. Noise contribution of the body resistance in partially-depleted SOI MOSFETs
30. Generation-recombination transient effects in partially depleted SOI transistors: systematic experiments and simulations
31. Subthreshold kinks in fully depleted SOI MOSFET's
32. Performance and potential of ultrathin accumulation-mode SIMOX MOSFET's
33. Latch and hot-electron gate current in accumulation-mode SOI p-MOSFET's
34. Correlation of the leakage current and charge pumping in silicon on insulator gate-controlled diodes
35. Hot-electron-induced degradation of front and back channels in partially and fully depleted SIMOX MOSFETs
36. Radiation-induced changes in floating-body phenomena in SOI MOSFET's
37. Detailed analysis of edge effects in SIMOX-MOS transistors
38. Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafers
39. Adaptation of the charge pumping technique to gated p-i-n diodes fabricated on silicon on insulator
40. Electron trapping in irradiated SIMOX buried oxides
41. Properties of ultra-thin wafer-bonded silicon-on-insulator MOSFET's
42. Hot-carrier-induced degradation of the back interface in short-channel silicon-on-insulator MOSFETS
43. Optimization of SIMOX for VLSI by electrical characterization
44. Low-frequency noise in depletion-mode SIMOX MOS transistors
45. Characterization of carrier generation in enhancement-mode SOI MOSFET's
46. Performance and physical mechanisms in SIMOX MOS transistors operated at very low temperature
47. Effects of localized interface defects caused by hot-carrier stress in n-channel MOSFETs at low temperature
48. Modeling of the 1/f noise overshoot in short-channel MOSFETs locally degraded by hot-carrier injection
49. Two-dimensional modeling of locally damaged short-channel MOSFET's operating in the linear region
50. Static and dynamic transconductance model for depletion-mode transistors: a new characterization method for silicon-on-insulator materials
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