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In this paper, the electrical properties of oxide cathode\ud and oxide cathode plus, supplied by LG Philips Displays, have been\ud investigated in relation to different cathode activation regimes and\ud methods. Oxide cathode activation treatment for different durations\ud has been investigated. The formations of the compounds associated\ud to the diffusion of reducing elements (Mg, Al, and W) to the Ni cap surface of oxide cathode were studied by a new suggestion method. Scanning electron microscopy (SEM) coupled with energy dispersive X-ray spectroscopy (EDX) was used as analytical techniques.\ud Al, W, and Mg doping elements take place during heating to 1080 K (Ni-Brightness) under a rich controlled Ba–SrO atmosphere through an acceleration life test. The chemical transport of these elements was occurred mainly by the Ni cap grain boundary mechanism with significant pile-up of Mg compounds. Al and W show a superficial concentrations and distribution.\ud A new structural and resistivity network model of oxide cathode plus are suggested. The new structural model shows a number of metallic and metallic oxide pathways are exist at the interface or extended through the oxide coating. The effective values of the resistances\ud and the type of the equivalent circuit in the resistivity network\ud model are temperature and activation time dependent.

The emission and conductivity characteristics of oxide cathodes depend largely on the activation process. In this paper, the electrical properties of new type of oxide cathodes for cathode ray tube (CRT) application, supplied by LG Philips Displays, have been investigated in relation to different cathode activation regimes. The influence of the activation process over different durations has been investigated. A temperature of T=1425 K was chosen to be higher than the optimum cathode activation temperature (T=1200 K), and the other temperature of T=1125 K was lower than that. The electron activation energy (E) was found to vary in the range from 0.58 to 2.28 eV for cathodes activated at the higher temperature regime, and from 1.08 to 1.9 eV for those activated at the lower temperature regime. Scanning electron microscopy (SEM) and electron diffraction X-ray (EDX) analyses show a structural phase transformation in the oxide material that was activated at 1125 K for a period of 1-12 hours. The SEM mapping shows a large contamination of Ba in the top layer of oxide material. The activator agents tungsten and aluminum are found to penetrate into the BaO/spl bsol/SrO layer in two different ways.

Metal-insulator-semiconductor structures were fabricated using 40-layers-thick Langmuir-Blodgett (LB) films of stearic acid (SA) on hydrophobic n-type silicon (n-Si) substrates. Cadmium sulphide (CdS) nanoparticles were introduced by exposure to H/sub 2/S gas for a period of 12 h. Samples containing CdS nanoparticles exhibit lower dc leakage current but higher effective dielectric constant. The effective dielectric constant of the CdS embedded SA matrix is found to be 5.1. The Poole-Frenkel effect is prevalent for charge transport in the LB films containing CdS nanoparticles at the field higher than 10/sup 7//spl middot/ Vm/sup -1/. The effect becomes saturated at higher fields.

Cadmium sulfide (CdS) nanoparticles formed within Langmuir-Blodgett (LB) films of stearic acid and calix[8]arene were studied with different optical methods including surface plasmon resonance (SPR), ellipsometry and UV-visible absorption and fluorescence spectroscopies. For the first time, the process of formation of CdS nanoparticles within LB films was monitored in-situ with SPR. The results of ellipsometry, SPR and UV-vis absorption spectroscopy were analyzed to evaluate simultaneously the thickness, refractive index and extinction coefficient of LB films. It was shown that all three parameters increase as a result of formation of CdS nanoparticles. Photoluminescence measurements provided direct confirmation directly for previous observation with UV-vis absorption spectroscopy of the blue spectral shift caused by CdS particles formation. The observed large Stoke's shift of the luminescence band is discussed in terms of the formation of "dark excitons" in the platelet-type CdS nanoclusters. AFM study shows the formation of pseudo-two dimensional platelets of CdS with the lateral dimensions in the range of 20-30 nm.