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International audience; This article investigates the dark current as well as the dark current random telegraph signal (RTS) after 1-MeV electron, 3-MeV electron, and 10-keV X-ray irradiations in a pinned photodiode CMOS image sensor (CIS). A large range of deposited ionizing dose from 10 to 525 krad(SiO 2 ) is considered. The displacement damage dose deposited through electron irradiation ranges from 60 to 1200 TeV · g -1 . Results on dark current distributions highlight the predominance of the ionizing damage in opposition to the displacement damage induced by the electron irradiations. Moreover, the dark current distributions also suggest that if the ionizing dose is high enough [i.e., beyond 50 krad(SiO 2 )], the trapped positive charges in the silicon oxides create high magnitude electric field regions leading to an electric field enhancement (EFE) of the dark current which is neither present at lower doses nor in pristine image sensors. This EFE mechanism also seems to have a strong influence on the RTS leading to a clear discrepancy from the existing dark current nonuniformity model developed for amplitude distributions in CISs as well as from what is reported in the literature in the more studied ionizing dose range. Annealing treatments after electron irradiations have highlighted the existence of specific population of pixels sharing the same well-defined maximum transition amplitudes (i.e., maximum amplitude between two dark current levels). The results suggest the use of maximum transition amplitude spectroscopy applied to dark current RTS to push forward the investigation on radiation-induced defects creation and identification.

International audience; This study presents an analytical model of the Full Well Capacity(FWC) in Pinned Photodiode (PPD) CMOS image sensors. By introducing the temperature dependence of the PPD pinning voltage, the existing model is extended (with respect to previous works) to take into account the effect of temperature on the FWC. It is shown, with the support of experimental data, that whereas in dark conditions the FWC increases with temperature, a decrease is observed if FWC measurements are performed under illumination. This study also shows that after a light pulse, the charge stored in the PPD drops as the PPD tends toward equilibrium. On the base of these observations, an analytical model of the dynamic behaviour of the FWC in non-continuous illumination conditions is proposed. The model is able to reproduce experimental data over six orders of magnitude of time. Both the static and dynamic models can be useful tools to correctly interpret FWC changes following design variations and to accurately define the operating conditions during device characterizations.

International audience; This paper focuses on the Dark Current-Random Telegraph Signal (DC-RTS) in solid-state image sensors. The DC-RTS is investigated in several bulk materials, for different surface interfaces and for different trench isolation interfaces. The main parameter used to characterize the DC-RTS is the transition maximum amplitude which seems to be the most appropriate for studying the phenomenon and identifying its origin. Proton, neutron and Co-60 Gamma-ray irradiations are used to study DC-RTS induced by both Total Ionizing Dose (TID) and Displacement damage (Dd) dose. Conclusions are drawn by analyzing the correlation between the exponential slope of the transition maximum amplitude histogram and the location of the DC-RTS-induced defects. The presented results can be extrapolated to predict DC-RTS distributions in various kinds of solid state image sensors.

International audience; Radiation effects in thick isolation oxides of modern CMOS technologies are investigated using dedicated test structures designed using two commercial foundries. Shallow Trench Isolation and Pre-Metal Dielectric are studied using electrical measurements performed after X-ray irradiations and isochronal annealing cycles. This paper shows that trapping properties of such isolation oxides can strongly differ from those of traditional thermal oxides usually used to process the gate oxide of Metal Oxide Semiconductor Field Effect Transistors. Buildup and annealing of both radiation-induced oxide-trap charge and radiation-induced interface traps are discussed as a function of the oxide type, foundry and bias condition during irradiation. Radiation-induced interface traps in such isolation oxides are shown to anneal below 100°C contrary to what is usually observed in thermal oxides. Implications for design hardening and radiation tests of CMOS Integrated Circuits are discussed.

Adaptive detection of distributed radar targets in homogeneous Gaussian noise plus subspace interference is addressed. It is assumed that the actual steering vectors lie along a fixed and unknown direction of a preassigned and known subspace, while interfering signals are supposed to belong to an unknown subspace, with directions possibly varying from one resolution cell to another. The resulting detection problem is formulated in the framework of statistical hypothesis testing and solved using an ad hoc algorithm strongly related to the generalised likelihood ratio test. A performance analysis, carried out also in comparison to natural benchmarks, is presented.

1.4μm pixel pitch CMOS Image sensors based on hole collection pinned photodiode (HPD) have been irradiated with 60Co source. The HPD sensors exhibit much lower dark current degradation than equivalent commercial sensors using an Electron collection Pinned Photodiode (EPD). This hardness improvement is mainly attributed to carrier accumulation near the interfaces induced by the generated positive charges in dielectrics. The pre-eminence of this image sensor based on hole collection pinned photodiode architectures in ionizing environments is demonstrated.

CMOS image sensor hardness under irradiation is a key parameter for application fields such as space or medical. In this paper, four commercial sensors featuring different technological characteristics (pitch, isolation or buried oxide) have been irradiated with 60Co source. Based on dark current and temporal noise analysis, we develop and propose a phenomenological model to explain pixel performance degradation.

International audience; The origin of total ionizing dose induced dark current in CMOS image sensors is investigated by comparing dark current measurements to interface state density and trapped charge density measurements. Two types of photodiode and several thick-oxide-FETs were manufactured using a 0.18-μm CMOS image sensor process and exposed to 10-keV X-ray from 3 krad to 1 Mrad. It is shown that the radiation induced trapped charge extends the space charge region at the oxide interface, leading to an enhancement of interface state SRH generation current. Isochronal annealing tests show that STI interface states anneal out at temperature lower than 100°C whereas about a third of the trapped charge remains after 30 min at 300°C.

In a recent paper we introduced a modification of the adaptive beaniformer orthogonal rejection test (ABORT) for adaptive detection of signals in unknown noise, by supposing under the null hypothesis the presence of signals orthogonal to the nominal steering vector in the whitened observation space. We will refer to this new receiver as the whitened adaptive beamformer orthogonal rejection test (W-ABORT). Through Monte Carlo simulations this new detector was shown to provide better rejection capabilities of mismatched (e.g., sidelobe) signals than existing ones, like ABORT or the adaptive coherence estimator (ACE), but at the price of a certain loss in terms of detection of matched (i.e., mainlobe) signals. The aim of this paper is to provide a theoretical validation of this fact. We consider both the case of distributed targets and point-like targets. We provide a statistical characterization of the W-ABORT test statistic, under the null hypothesis, and for matched and mismatched signals under the alternative hypothesis. For distributed targets, the probability of false alarm and the probability of detection can only be expressed in terms of multi-dimensional integrals, and are thus very complicated to obtain; in contrast, for point-like targets, such probabilities can be easily calculated by numerical integration techniques. The theoretical expressions derived herein corroborate the simulation results obtained previously.

In this paper, we derive and assess decision schemes to discriminate, resorting to an array of sensors, between the H0 hypothesis that data under test contain disturbance only (i.e., noise plus interference) and the H1 hypothesis that they also contain signal components along a direction which is a priori unknown but constrained to belong to a given subspace of the observables. The disturbance is modeled in terms of complex normal random vectors plus deterministic interference assumed to belong to a known subspace. We assume that a set of noise-only (secondary) data is available, which possess the same statistical characterization of noise in the cells under test. At the design stage, we resort to either the plain generalized-likelihood ratio test (GLRT) or the two-step GLRT-based design procedure. The performance analysis, conducted resorting to simulated data, shows that the one-step GLRT performs better than the detector relying on the two-step design procedure when the number of secondary data is comparable to the number of sensors; moreover, it outperforms a one-step GLRT-based subspace detector when the dimension of the signal subspace is sufficiently high.