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Your search keyword '"Marso, Michel"' showing total 2 results
Start Over Author "Marso, Michel" Publisher institute of electrical and electronics engineers, inc.
2 results on '"Marso, Michel"'

1. Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs

Author

Marso, Michel, Heidelberger, Gero, Indlekofer, Klaus Michael, Bernat, Juraj, Fox, Alfred, Kordos, P., and Luth, Hans

Subjects
Field-effect transistors -- Design and construction, Gallium compounds -- Electric properties, Nitrides -- Electric properties, Electron mobility -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

A comparative investigation is performed of the unpassivated and the passivated heterojunction field-effect transistors (HFETs) and of the metal-oxide semiconductor HFETs (MOSHFETs) that are fabricated with identical-layer structures and fabrication technology. The influence of a `10-nm-thick silicon-dioxide layer was investigated based on an undoped AlGaN/GaN heterostructure on a SiC substrate.

Published
2006

2. Overgrown silicon PBT's: calculations and measurements

Author

Schuppen, Andreas, Marso, Michel, and Luth, Hans

Subjects
Transistors -- Design and construction, Semiconductors -- Diffusion, Business, Electronics, Electronics and electrical industries
Abstract

Two-dimensional drift diffusion simulations and analytical calculations yield design rules for optimization of high frequency performance of silicon permeable base transistors (PBTs). The essential PBT parameter is the source-drain distance. Unity current-gain frequencies over 50 GHz are obtained for thicknesses below 200 nanometers. MOS-compatible n-type Si(100) is fabricated with buried monocrystalline CoSi2-gates. Good agreement exists between measured and simulated output characteristics.

Published
1994

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