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Rubber was produced by placing rubber latex between two electrodes between which an external voltage was maintained. The thickness of the rubber deposited on the anode was measured as a function of time of electrolysis, voltage applied across the electrodes and distance between the electrodes. based on the observed dielectric responses of rubber obtained through the electrolysis process, an electrical model of conductance and complex capacitance elements linked in parallel is proposed, indicating the additive nature of the individual responses in the system. Electrical representation of rubber obtained by simple drying however showed two different models. Natural rubber was found to have all the elements connected in parallel while that of vulcanized rubber was found to have a series connection of a pair of parallel connected conductance and capacitance elements.

The use of microsecond pulsed deposition to achieve anodic oxidation of YBa2Cu3O(7-x) thin films at room temperature is investigated. Specifically, currents of up to 15.2 A were applied to oxygen-deficient thin films in aqeous solution at five kilohertz for a period of 1.3 microsecond. The procedure, which enhanced the oxygen stoichiometry of the films, restored the superconducting capabilities and modified the microstructure of the films.

This paper describes the design of a modulator which can produce high voltage klystron drive pulses with minimal ripple on the top. The design study focused on ways to reduce ripple and adjust the shape of the pulse to minimize variations in the final output of the klystron. Comparisons of the pulse performance for a range of possible loads were done to determine the sensitivity of the design to load characteristics. The resulting modulator design incorporates dual pulse forming networks and uses a cancellation scheme to reduce ripple. The basic design, simulations and the performance of a low power prototype are discussed. A high power klystron modulator design is summarized.

An analysis of a-Si thickness as affecting thermal annealing in terms of the resistance to oxidation and self-aligning silicidation features in the a-Si and Ti bilayer process is presented. Ti metal with a thickness of 500 Angstroms is used with the process window reduced. Reaction with limited diffusion and accumulation of excess oxygen waste in the silicide layer allow the Ti-film thickness to affect the formation sequence during the silicide phase. Process window size is found to increase in direct proportion to increases in Ti film thickness.