1. Reduction of self-heating effect in (Ga)ZnO thin film transistor
- Author
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Amuthasurabi M, Seong-Ju Park, Leenus Jesu Martin, and J. Chandradass
- Subjects
Materials science ,chemistry.chemical_element ,02 engineering and technology ,Oxide thin-film transistor ,01 natural sciences ,law.invention ,Sputtering ,law ,0103 physical sciences ,Materials Chemistry ,Electronic engineering ,Gallium ,010302 applied physics ,business.industry ,Transistor ,Surfaces and Interfaces ,Sputter deposition ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Semiconductor ,chemistry ,Thin-film transistor ,Optoelectronics ,0210 nano-technology ,business ,Layer (electronics) - Abstract
RF magnetron sputtering technique was employed to fabricate gallium zinc oxide ((Ga)ZnO) semiconductor thin film transistor (TFT) at 100°C. X-ray diffraction and Scanning electron microscopy were used to identify the structure and morphology of (Ga)ZnO layer. Self-heating effect was very much reduced when compared with output characteristics of a TFT fabricated using undoped zinc oxide. The low deposition and processing temperatures make (Ga)ZnO-TFTs very promising for the flexible electronics.
- Published
- 2017
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