1. Full Integration of Highly Reliable Phase Change Memory With Advanced Ring Type Bottom Electrode Contact
- Author
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Jonghyun Oh, Jae Park, C.W. Jeong, Y.T. Kim, H.S. Jeong, Kyung-Chang Ryoo, Jung-hyeon Kim, Gitae Jeong, Y. Fai, Jae-Sung Kim, Soon-oh Park, Jeong-Taek Kong, Ji-Hee Kim, Dae-Hwan Kang, Dong-won Lim, J.H. Park, Young-woo Song, Y.T. Oh, Jun-Ho Shin, Kinam Kim, and Gwan-Hyeob Koh
- Subjects
Materials science ,Chalcogenide ,business.industry ,Process (computing) ,Dielectric ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Phase-change memory ,Core (optical fiber) ,Process variation ,chemistry.chemical_compound ,Reliability (semiconductor) ,chemistry ,Control and Systems Engineering ,Materials Chemistry ,Ceramics and Composites ,Optoelectronics ,Electrical and Electronic Engineering ,Data retention ,business - Abstract
We successfully developed 256Mb Phase Change Random Access Memory (PRAM) based on 0.10μ m-CMOS technologies using ring type contact. The writing current with uniform CD process variation of Bottom Electrode Contact (BEC) was achieved by improving CMP process and developing core dielectric material. Also, the ring type contact scheme provided strong reliability such as the cycling endurance and data retention time for 256 Mb high density PRAM.
- Published
- 2007
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