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The development of a cost-efficient device to rapidly detect pandemic viruses is paramount. Hence, an innovative and scalable synthesis of metal nanoparticles followed by its usage for rapid detection of severe acute respiratory syndrome coronavirus-2 (SARS-CoV-2) has been reported in this work. The simple synthesis of metal nanoparticles utilizing tin as a solid-state reusable reducing agent is used for the SARS-CoV-2 ribonucleic acid (RNA) detection. Moreover, the solid-state reduction process occurs faster and leads to the enhanced formation of silver and gold nanoparticles (AuNPs) with voltage. By adding tin as a solid-state reducing agent with the precursor, the nanoparticles are formed within 30 s. This synthesis method can be easily scaled up for a commercially viable process to obtain different-sized metal nanoparticles. This is the first disclosure of the usage of tin as a reusable solid-state reducing agent for metal nanoparticle synthesis. An electronic device, consisting of AuNPs functionalized with a deoxyribonucleic acid (DNA)-based aptamer, can detect SARS-CoV-2 RNA in less than 5 min. With an increase in SARS-CoV-2 variants, such as Delta and Omicron, the detection device could be used for identifying the nucleic acids of the COVID-19 variants by modifying the aptamer sequence. The reported work overcomes the drawbacks of complex instrumentation, trained labor, and increased turnaround time. [ABSTRACT FROM AUTHOR]

Steinberg-equation-based vibration mechanical fatigue lifetime estimation of the Sn-Ag-Cu-based solder joints was extracted for the power semiconductor modules. In this model, maximum displacement of the printed circuit board (PCB) is used as the failure root cause for mechanical lifetime estimation. Contrary to the existing lifetime models, the proposed model is capable of considering the effects of location of the power semiconductor modules in the PCB leading to much more accurate predictions. For confirmation, multiple tests are conducted to support the theoretical process for the calculation of the lifetime of the solder joint under vibration loading. Experiments are carried out on the basis of the ISO16750-3 test-I standard. The results show that the maximum error between analytical methods and experimental tests is limited to 55% for the central power semiconductors. [ABSTRACT FROM AUTHOR]

An analysis methodology is presented to investigate soft failures in electronic devices. This methodology combines transmission line pulse (TLP) full-wave simulations with system-level and TLP measurements. Information on susceptible parts in the device under test (DUT) and/or soft failure sensitivity of the integrated circuits (ICs) are obtained from the measurements. Then, the TLP current spreading within the printed circuit board (PCB) of the DUT is simulated. The susceptible signals can be determined by comparing the simulated voltages and/or currents at the signal terminations with the measured threshold values. If the simulated voltages and/or currents are higher than the threshold values, the signal is considered susceptible and a soft failure may occur in the DUT. Using the obtained information from simulations and measurements, the root causes of soft failures can be identified. Further, by utilizing full-wave simulations, the design of the product can be modified to reduce the electrostatic discharge (ESD) noise on the susceptible signals, and consequently prevent soft failures. The proposed analysis methodology is applied to a tablet which suffers from soft failure. The root cause of the soft failure is identified, and countermeasures are designed against the ESD-induced soft failure. [ABSTRACT FROM AUTHOR]

The design and development of a Zigbee smart noninvasive wearable physiological parameters monitoring device has been developed and reported in this paper. The system can be used to monitor physiological parameters, such as temperature and heart rate, of a human subject. The system consists of an electronic device which is worn on the wrist and finger, by an at-risk person. Using several sensors to measure different vital signs, the person is wirelessly monitored within his own home. An impact sensor has been used to detect falls. The device detects if a person is medically distressed and sends an alarm to a receiver unit that is connected to a computer. This sets off an alarm, allowing help to be provided to the user. The device is battery powered for use outdoors. The device can be easily adapted to monitor athletes and infants. The low cost of the device will help to lower the cost of home monitoring of patients recovering from illness. A prototype of the device has been fabricated and extensively tested with very good results. [ABSTRACT FROM PUBLISHER]

It was found that the switching in a memristor takes place with a time delay (this peculiar feature is named "the delayed switching"). This feature has been verified by a circuit-based experiment. The physical interpretation of this phenomenon is that an electron element possesses certain inertia, i.e., charge q or flux φ is inertial with the tendency to remain unchanged (settle to some equilibrium state). It cannot respond as rapidly as the fast variation in the excitation waveform and always takes a finite but small time interval to change its resistance value, as it must take place in a memristor or memristive system. In addition, a potential application of using this feature in ultradense computer memory has been discussed. [ABSTRACT FROM AUTHOR]

The evaporative cooling technique described in this paper is uniquely suited to systems where the chip or actual electronic device can be bonded directly to the graphite foam and then immersed in the cooling fluid. It is desired, however, to adapt this technology to stand alone and aftermarket heat sinks for desktop computers and electronic devices. This would be suitable for either OEM or aftermarket heat sinks if the thermal resistance can be similar to the state of the art aluminum and copper finned heat sinks. [ABSTRACT FROM PUBLISHER]

We present in this letter the benefits of GaN-based electronic devices for low-noise MMICs. A temperature-dependent two-temperature noise model for AlGaN/GaN HFETs is implemented on a wide range of bias conditions. This study enables to access the device high-frequency noise parameters, and allow a comparison of the noise performances with SiC and GaAs technologies. [ABSTRACT FROM PUBLISHER]