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Your search keyword '"Zilkie, A. J."' showing total 11 results
Start Over Author "Zilkie, A. J." Publisher ieee
11 results on '"Zilkie, A. J."'

3. Multi-Micron Silicon Photonics Platform for Highly Manufacturable and Versatile Photonic Integrated Circuits.

Author

Zilkie, Aaron J., Srinivasan, Pradeep, Trita, Andrea, Schrans, Thomas, Yu, Guomin, Byrd, Jerry, Nelson, David A., Muth, Karl, Lerose, Damiana, Alalusi, Mazin, Masuda, Kevin, Ziebell, Melissa, Abediasl, Hooman, Drake, John, Miller, Gerald, Nykanen, Henri, Kho, Evie, Liu, Yangyang, Liang, Hong, and Yang, Hua

Abstract

We describe and characterize a multi-micron silicon photonics platform that was designed to combine performance, power efficiency, manufacturability, and versatility for integrated photonic applications ranging from data communications to sensors. We outline the attributes needed for broad applicability, high-volume manufacturing, and large-scale deployment of silicon photonics, and describe how the platform is favorable with respect to these attributes. We present demonstrations of key technologies needed for the communications and sensing applications, including low-loss fiber attach, compact low-loss filters, efficient hybrid wavelength division multiplexed lasers, and high-speed electro-absorption modulators and integrated photodetectors. [ABSTRACT FROM AUTHOR]

Published
2019
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4. Ultrafast gain and index dynamics in an InAs/InGaAsP quantum dot amplifier operating at 1.55 μm

Author

Zilkie, A. J., Meier, J., Smith, P. W. E., Mojahedi, M., Aitchison, J. S., Poole, P. J., Ni, C., Barrios, Allen P., and Poitras, D.

Abstract

The gain and index dynamics of a QD amplifier operating at 1.55 mum are characterized via heterodyne pump-probe measurements with 150 fs resolution. A 13 ps gain recovery time was found, promising for all-optical signal processing., 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, May 21-26, 2006, Long Beach, CA, USA

Published
2006

11. Carrier Dynamics of Quantum-Dot, Quantum-Dash, and Quantum-Well Semiconductor Optical Amplifiers Operating at 1.55 μm.

Author

Zilkie, Aaron J., Meier, Joachim, Mojahedi, Mo, Poole, Philip J., Barrios, Pedro, Poitras, Daniel, Rotter, Thomas J., Chi Yang, Stintz, Andreas, Malloy, Kevin J., Smith, Peter W. E., and Aitchison, J. Stewart

Subjects
*PHYSICS research, *METAPHYSICS, *QUANTUM electronics, *OPTICAL amplifiers, *OPTOELECTRONIC devices, *SEMICONDUCTORS, *QUANTUM dots, *QUANTUM wells, *WAVELENGTHS
Abstract

We assess the influence of the degree of quantum confinement on the carrier recovery times in semiconductor optical amplifiers (SOAs) through an experimental comparative study of three amplifiers, one InAs-InGaAsP-InP quantum dot (O-D), one InAs-InAlGaAs-InP quantum dash (1-D), and one InGaAsP-In- GaAsP-InP quantum well (2-D), all of which operate near 1.55-μm wavelengths. The short-lived (around 1 ps) and long-lived (up to 2 ns) amplitude and phase dynamics of the three devices are characterized via heterodyne pump-probe measurements. The quantum-dot device is found to have the shortest long-lived gain recovery (~80 ps) as well as gain and phase changes indicative of a smaller linewidth enhancement factor, making it the most promising for high-bit-rate applications. The quantum-dot amplifier is also found to have reduced ultrafast transients, due to a lower carrier density in the dots. The quantum-dot gain saturation characteristics and temporal dynamics also provide insight into the nature of the dot energy-level occupancy and the interactions of the dot states with the wetting layer. [ABSTRACT FROM AUTHOR]

Published
2007
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