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6 results on '"Zafar, Faiza"'

1. Highly Linear Inductively Degenerated 0.13 mu m CMOS LNA using FDC Technique

Author

Arshad, Sana, Ramzan, Rashad., Zafar, Faiza, Wahab, Qamar-Ul, Arshad, Sana, Ramzan, Rashad., Zafar, Faiza, and Wahab, Qamar-Ul

Abstract

In this paper, a highly linear, inductively degenerated, common source narrowband LNA is presented. An extremely simple feed-forward distortion circuit (FDC) which consists of an appropriately sized ac-coupled diode connected NMOS is proposed. This circuit generates distortion components at output, when added at the input node as a feed forward element (M-6). These distortion components partially cancel the 3rd order nonlinearity of the cascode pair (M-2 and M-3), thus improving the overall linearity of LNA. The prototype is manufactured in standard 0.13 mu m CMOS process from IBM. Simulation and partial measurement results show the S11 and S22 to be -19.27dB and -7.14dB respectively at 2.45GHz. The simulation results of the LNA demonstrate a power gain of 18.5dB, NF of 4.38dB, input referred 1dBCP of -11.76dBm and IIP3 of +0.7dBm consuming 27.7mA from 1.0V power supply. The proposed LNA achieves the best input referred IIP3 reported in recent literature using 0.13 mu m CMOS in 2.4GHz frequency band.

Published
2014
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5. High-Efficiency Fully CMOS VCO Rectifier for Microwatt Resonant Wireless Power Transfer.

Author

Ramzan, Rashad and Zafar, Faiza

Abstract

Implantable biomedical devices are expected to be an integral part of future health care. Resonant coupling is a new and efficient method for wireless power transfer (WPT) in the presence of different kinds of body masses and tissues. The coupling also overcomes the problem of exponential decrease in power in inductive coupling with an increase in the distance between a transmitter and a receiver. The main problem with WPT is inefficient rectification at low input power levels. A classical full-wave rectifier has extremely low efficiency at higher frequencies for input voltages less than 2 V. In this letter, we present a solution to the inefficient rectification problem by proposing an integrated voltage-controlled-oscillator-based rectifier. The rectifier operates at 900 MHz and is implemented in the standard 0.13-μm CMOS technology. This design has a measured conversion efficiency of 52.5%, with an output power of 54.76 μW and an output voltage of 0.74 V. The rectifier and the regulator occupy an area of only 0.32 mm2, including the resonant inductors and a capacitor. [ABSTRACT FROM AUTHOR]

Published
2015
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6. Design of a 19–22GHz wideband LNA in 0.13 µm CMOS technology using transmission lines.

Author

Zafar, Faiza, Arshad, Sana, and Qamar-ul Wahab

Abstract

This work presents the design of an inductorless 19–22GHz wideband Low Noise Amplifier in 0.13µm CMOS technology from IBM. A single ended three stage configuration is used. The circuit is designed in Cadence SpectreRF and employs resistive feedback technique to improve linearity and bandwidth. Impedance matching is obtained using transmission lines. At 20GHz, the low noise amplifier has a gain of 27dB, noise figure (NF) of 2.55dB, input referred ldB-CP of −21dBm and input referred third order intercept point (IEP3) of −9.5dBm consuming 75mW from IV supply. This design has the best gain and noise figure reported till date in 0.13µm CMOS technology for single ended 19–22GHzwidebandinductorless LNAs. [ABSTRACT FROM PUBLISHER]

Published
2011
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