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1. Microwave Neural Processing and Broadcasting with Spintronic Nano-Oscillators

Author

Talatchian, P., primary, Romera, M., additional, Tsunegi, S., additional, Araujo, F. Abreu, additional, Cros, V., additional, Bortolotti, P., additional, Trastoy, J., additional, Yakushiji, K., additional, Fukushima, A., additional, Kubota, H., additional, Yuasa, S., additional, Ernoult, M., additional, Vodenicarevic, D., additional, Hirtzlin, T., additional, Locatelli, N., additional, Querlioz, D., additional, and Grollier, J., additional

Published
2018
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4. Low frequency noise in vortex spin torque nano-oscillators

Author

Wittrock, S., primary, Tsunegi, S., additional, Yakushiji, K., additional, Fukushima, A., additional, Kubota, H., additional, Bortolotti, P., additional, Ebels, U., additional, Yuasa, S., additional, Cibiel, G., additional, Rubiola, E., additional, and Cros, V., additional

Published
2018
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12. Spintronic nano-oscillators: Towards nanoscale and tunable frequency devices

Author

Grimaldi, E., primary, Lebrun, R., additional, Jenkins, A., additional, Dussaux, A., additional, Grollier, J., additional, Cros, V., additional, Fert, A., additional, Kubota, H., additional, Yakushiji, K., additional, Fukushima, A., additional, Matsumoto, R., additional, Yuasa, S., additional, Cibiel, G., additional, Bortolotti, P., additional, and Pillet, G., additional

Published
2014
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13. Future prospects of MRAM technologies

Author

Yuasa, S., primary, Fukushima, A., additional, Yakushiji, K., additional, Nozaki, T., additional, Konoto, M., additional, Maehara, H., additional, Kubota, H., additional, Taniguchi, T., additional, Arai, H., additional, Imamura, H., additional, Ando, K., additional, Shiota, Y., additional, Bonell, F., additional, Suzuki, Y., additional, Shimomura, N., additional, Kitagawa, E., additional, Ito, J., additional, Fujita, S., additional, Abe, K., additional, Nomura, K., additional, Noguchi, H., additional, and Yoda, H., additional

Published
2013
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14. Spin-RAM for Normally-Off Computer

Author

Ando, K., primary, Yakushiji, K., additional, Kubota, H., additional, Fukushima, A., additional, Yuasa, S., additional, Kai, T., additional, Kishi, T., additional, Shimomura, N., additional, Aikawa, H., additional, Yoshikawa, M., additional, Nagase, T., additional, Nishiyama, K., additional, Kitagawa, E., additional, Daibou, T., additional, Amano, M., additional, Takahashi, S., additional, Nakayama, M., additional, Ikegawa, S., additional, Nagamine, M., additional, Ozeki, J., additional, Watanabe, D., additional, Yoda, H., additional, Nozaki, T., additional, Suzuki, Y., additional, Oogane, M., additional, Mizukami, S., additional, Ando, Y., additional, Miyazaki, T., additional, and Nakatani, Y., additional

Published
2011
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16. Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM

Author

Kishi, T., primary, Yoda, H., additional, Kai, T., additional, Nagase, T., additional, Kitagawa, E., additional, Yoshikawa, M., additional, Nishiyama, K., additional, Daibou, T., additional, Nagamine, M., additional, Amano, M., additional, Takahashi, S., additional, Nakayama, M., additional, Shimomura, N., additional, Aikawa, H., additional, Ikegawa, S., additional, Yuasa, S., additional, Yakushiji, K., additional, Kubota, H., additional, Fukushima, A., additional, Oogane, M., additional, Miyazaki, T., additional, and Ando, K., additional

Published
2008
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20. High quality ion implanter; EXCEED3000AH-Nx for 45nm beyond I/I process<Beam Size and Angle>

Author

Tanjyo, M., primary, Sakai, S., additional, Ikejiri, T., additional, Tanaka, K., additional, Koga, Y., additional, Kobayashi, T., additional, Matsumoto, T., additional, Nakaya, M., additional, Kibi, Y., additional, Yamashita, T., additional, Nagayama, T., additional, Hamamoto, N., additional, Umisedo, S., additional, Yuasa, S., additional, Naito, M., additional, and Nagai, N., additional

Published
2006
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34. Spin-RAM for Normally-Off Computer.

Author

Ando, K., Yakushiji, K., Kubota, H., Fukushima, A., Yuasa, S., Kai, T., Kishi, T., Shimomura, N., Aikawa, H., Yoshikawa, M., Nagase, T., Nishiyama, K., Kitagawa, E., Daibou, T., Amano, M., Takahashi, S., Nakayama, M., Ikegawa, S., Nagamine, M., and Ozeki, J.

Published
2011
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44. Microfabrication of Magnetic Tunnel Junctions Using CH3OH Etching.

Author

Otani, Y., Kubota, H., Fukushima, A., Maehara, H., Osada, T., Yuasa, S., and Ando, K.

Subjects
ANTIFERROMAGNETISM, WAVE-guide junctions, MICROFABRICATION, TUNNELS, ETCHING
Abstract

The 100-nm-scale CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) were fabricated using a CH3 OH etching process. These MTJs have steep side walls and show clear MR loops. The distributions of magnetic properties of CH3 OH etched MTJs were smaller than those of conventional Ar ion etched MTJs. [ABSTRACT FROM AUTHOR]

Published
2007
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45. Growth and Transport Studies in M/I/p-SC Magnetic Tunnel Diodes Contailning Different Tunnel Barrier Materials.

Author

Agarwal, K. C., Saito, H., Yuasa, S., and Ando, K.

Subjects
DIODES, MAGNETIC fields, FERROMAGNETISM, MAGNETORESISTANCE, LATTICE theory
Abstract

Metal-insulator-semiconductor (MIS) magnetic tunnel diodes consisting of ferromagnetic metal (Fe) and semiconductor (Ga1-xMnxAs) electrodes with various tunnel barrier materials (AlAs, GaAs, ZnTe, and MgO) were fabricated. A clear tunneling magnetoresistance (TMR) effect was observed in all the samples. Magnetoresistance ratios at 2 K were observed to be 38% for AlAs, 11% for GaAs, 8% for ZnTe, and ~1% for MgO. Growth and transport studies strongly suggested that the small lattice mismatch between the barrier and the electrode materials and Mn-free interfaces are important for have significant influence on developing high-quality MIS magnetic tunnel diodes. [ABSTRACT FROM AUTHOR]

Published
2007
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46. Defect-Mediated Properties of Magnetic Tunnel Junctions.

Author

Velev, J. P., Ye. Zhuravlev, M., Belashchenko, K. D., Jaswal, S. S., Tsymbal, E. Y., Katayama, T., and Yuasa, S.

Subjects
METALLIC oxides, TUNNELS, ANTIFERROMAGNETISM, DENSITY functionals, RESONANCE
Abstract

Defects play an important role in the properties of metal oxides which are currently used as barrier layers in magnetic tunnel junctions (MTJs). We study the effect of O vacancies on the interlayer exchange coupling (IEC) and tunneling magnetoresistance (TMR) in Fe-MgO-Fe tunnel junctions. Measurements of IEC in fully epitaxial Fe-MgO-Fe(001) tunnel junctions show IEC is antiferromagnetic (AFM) for small MgO thickness but changes sign and then vanishes for large barrier thickness. First-principles calculations based on density functional theory demonstrate that the presence of neutral O vacancies (F-centers) in the MgO barrier can explain this behavior. Resonant tunneling through the F-centers makes IEC AFM for thin barriers but with increasing MgO thickness the resonance contribution to IEC is reduced resulting in the ferromagnetic (FM) coupling typical for perfect MgO barriers. First-principles calculations also show that O vacancies can affect TMR. F-centers produce occupied localized s-states and unoccupied resonant p-states in the gap of MgO. We demonstrate that F-centers affect the conductance by either resonant transmission or nonresonant scattering of tunneling electrons both causing a substantial reduction of TMR compared to the ideal case. [ABSTRACT FROM AUTHOR]

Published
2007
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47. Magnetization Switching by Spin-Polarized Current in Low-Resistance Magnetic Tunnel Junction With MgO (001) Barrier.

Author

Kubota, H., Fukushima, A., Ootani, Y., Yuasa, S., Ando, K., Maehara, H., Tsunekawa, K., Djayaprawira, D. D., Watanabe, N., and Suzuki, Y.

Subjects
MAGNETIZATION, FERROMAGNETISM, MAGNETIC domain, FERROMAGNETIC materials, SPIN waves, MAGNETISM
Abstract

Current-induced magnetization switching (CIMS) was demonstrated in low resistance magnetic tunnel junctions (MTJs) with thin MgO (001) barrier. The resistance change by CIMS was more than 100%, which is much larger than the previous report in Al-O based MTJs. The switching current density was about 2 × 107 A/cm², which was comparable with that reported values in metallic multilayers. [ABSTRACT FROM AUTHOR]

Published
2005
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