1. Design the GaN junction barrier schottky diodes with array p-type pillar
- Author
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Y. T. Tseng, Yu-Li Wang, Keh-Yung Norman Cheng, Shao-Yen Chiu, and Wei-Chen Yang
- Subjects
010302 applied physics ,Materials science ,business.industry ,Schottky barrier ,020208 electrical & electronic engineering ,Pillar ,Schottky diode ,02 engineering and technology ,Metal–semiconductor junction ,01 natural sciences ,Electric field ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Optoelectronics ,business ,Voltage ,Diode - Abstract
The performance of JBS (P, S) structure within threading dislocations-induced (GaN on PSS∼108cm−2) traps and in drift-diffusion simulations, including the critical electric field are studied. As the forward and reverse operation, the pillar-to-pillar of various diode lead to the lower turn-on voltage and high breakdown, respectively. Then, it is important to note that is not punch-through the drift layer to n+-GaN yet because that difference is attributed to whether the intrinsic or extrinsic C-dopants, results in the n−-type drift layer or p+-type with bias-dependent deletion region.
- Published
- 2016