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We have integrated the low work function NiSi:Hf gate on high-κ LaAlO3 and on smart-cut Ge-on-insulator (SC-GOI) n-MOSFETs. At 1.4-nm equivalent oxide thickness, the NiSi:Hf-LaAlO3/SC-GOI n-MOSFET has comparable gate leakage current with the control Al gate on LaAlO3-Si MOSFETs that is ∼5 orders of magnitude lower than SiO2. In addition, the LaAlO3/SC-GOI n-MOSFET with a metal-like fully NiSi:Hf gate has high peak electron mobility of 398 cm²/Vs and 1.7 times higher than LaAlO3-Si devices. [ABSTRACT FROM AUTHOR]

High-κ Al2O3/Ge-on-insulator (GOI) n- and p-MOSFETs with fully silicided NiSi and germanided NiGe dual gates were fabricated. At 1.7-nm equivalent-oxide-thickness (EOT), the Al2O3-GOI with metal-like NiSi and NiGe gates has comparable gate leakage current with Al2O3-Si MOSFETs. Additionally, Al2O3-GOI C-MOSFETs with fully NiSi and NiGe gates show 1.94 and 1.98 times higher electron and hole mobility, respectively, than Al2 O3-Si devices, because the electron and hole effective masses of Ge are lower than those of Si. The process with maximum 500 °C rapid thermal annealing (RTA) is ideal for integrating metallic gates with high-κ to minimize interfacial reactions and crystallization of the high-κ material, and oxygen penetration in high-κ MOSFETs. [ABSTRACT FROM AUTHOR]

We have fabricated the fully silicided NiSi and germanided NiGe dual gates n- and p-MOSFETs on 1.9 nm thick SiO[sub 2] gate dielectric. The extracted work functions of fully NiSi and NiGe gates from thickness-dependent fiat band voltage were 4.55 and 5.2 eV respectively, which may provide possible wide work function tuning using NiSi[sub 1-x]Ge[sub x]. In additional to the lower gate current than Al gate n- and p-MOSFETs, the fully silicided NiSi and germanided NiGe gates MOSFETs show electron and hole mobilities close to universal mobility values with special advantage of process compatible to current VLSI fabrication line. [ABSTRACT FROM AUTHOR]