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We employ nano-scale imaging and spectroscopy techniques to elucidate polariton characteristics as a function of the complex refractive index of the substrate. Although higher-order polariton modes exhibit wavelengths weakly sensitive to the environment, the principal mode strongly depends on the substrate dielectric constant.

We demonstrate hyperspectral imaging of the charge carrier profiles of doped precharacterized SRAM arrays in the THz frequency range 13 cm−1 –60 cm−1 using a s-SNOM. We are able to map free carrier concentration in range of 1016 cm−3 –1020 cm−3 with broadband THz source.

Utilizing scattering-type scanning near-field optical microscopy (s-SNOM) with electrical read-out, we have demonstrated the ability of mapping optical and electronic properties of MoS 2 -based devices at length scales of tens of nanometers.

Muscovite type mica is an inorganic material most commonly used in various electronic devices. We use the near-field imaging and nano-FTIR techniques to investigate the properties of mica exfoliated on different substrates. In order to support experimental results, we use a theoretical model and simulation.