1. Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs
- Author
-
Zhi-Wei Zheng, Lei-Ying Ying, Yang Mei, Xu Rongbin, Baoping Zhang, Tian-Rui Yang, Hao Long, Jianping Liu, and Huan Xu
- Subjects
lcsh:Applied optics. Photonics ,Threshold current ,Materials science ,Thermal resistance ,02 engineering and technology ,Dielectric ,01 natural sciences ,Vertical-cavity surface-emitting laser ,law.invention ,Optical pumping ,lateral optical confinement ,law ,0103 physical sciences ,vertical cavity surface emitting lasers ,lcsh:QC350-467 ,Electrical and Electronic Engineering ,010302 applied physics ,Semiconductor lasers ,business.industry ,Slope efficiency ,lcsh:TA1501-1820 ,021001 nanoscience & nanotechnology ,Laser ,Atomic and Molecular Physics, and Optics ,Transverse plane ,Optoelectronics ,0210 nano-technology ,business ,lcsh:Optics. Light - Abstract
Two types of GaN vertical-cavity surface-emitting lasers (VCSELs), with and without lateral optical confinement (LOC) structure, were fabricated and their performances were compared. Compared with the VCSEL without LOC, the device with LOC showed a great improvement in threshold current, slope efficiency, output power and differential quantum efficiency, which was mainly due to the reduction of internal loss. Devices with LOC showed clear and multi-transversal mode structures. However, thermal dissipation became worse. The effects of such a design on thermal resistance and transverse modes were discussed.
- Published
- 2020