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Short wave infrared (SWIR) imaging has been used in various applications such as electronic board inspection, surveillance and gas detection. Unlike the conventional compound semiconductor focal plane array (FPA), in this work group IV back-illuminated imaging array with 320 $\times256$ pixels was demonstrated. For reference device with a diameter of 30 $\mu \text{m}$ , the dark current was 9.7 nA at 0 V. At 1550 nm, a responsivity of 0.61 A/W was obtained at −1 V using a Ge photodetector with a diameter of 75 $\mu \text{m}$. The image of a halogen lamp was successfully captured at room temperature with a pixel operating bias of 0 V. Showing great compatibility with the existing CMOS technology, group IV imaging array becomes one of the promising candidates to be applied in SWIR imaging area. [ABSTRACT FROM AUTHOR]

We report the design and fabrication of a high-speed GeSn normal-incidence p-i-n photodetector. To realize high-speed detection in all telecommunication bands, we optimize the Sn content in the absorption layer, the absorption-layer thickness, and the device size. The responsivity of the 18-μm-diameter device at 1550 nm reaches 0.32 A/W with an extended cutoff wavelength of 1700 nm and a 3-dB bandwidth as high as 28 GHz under −3 V bias, clear open eye diagrams are also obtained under zero bias at 1630 nm. All the results indicate that the device has a significant potential for applications in Si-based optical telecommunication in all telecommunication bands. [ABSTRACT FROM AUTHOR]