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We have studied the 1/f noise and total-dose response associated with the buried oxides (BOX) of fully depleted nMOS silicon-on-insulators (SOI) transistors. Silicon implantation in the BOX creates a higher density of oxygen vacancy-related defects that reduce the net oxide-trap charge, but increase the back-channel 1/f noise. The 1/f noise of MOSFETs fabricated on silicon-implanted SOI BOX shows little change after 1 Mrad(SiO2) irradiation. Silicon implantation also creates shallow electron traps in the BOX, leading to large bias instabilities. Whether these traps are filed or empty does not significantly affect the 1/f noise. A detailed study of, the 1/f noise, temperature dependence of charge trapping, and radiation response of these SOI nMOSFET transistors shows that charge exchange with shallow electron traps in the BOX occurs mostly via tunneling. Low frequency noise in the double-gate (DG) mode of device operation is also investigated, and found to help mitigate the 1/f noise in fully depleted SOI MOSFETs. [ABSTRACT FROM AUTHOR]

Presents a study that compared the temperature and frequency dependence of noise of metal oxide semiconductor transistors before and after radiation exposure and after postirradiation anneal. Background on the low-frequency noise theory; Assessment of threshold-voltage measurements; Analysis of defect-energy distributions.

Presents a study that analyzed density-functional theory calculations suggesting the 1/f noise of metal-oxide-silicon devices is caused by the capture and emissions of electrons at oxygen vacancy defects near the Si-SiO[sub2] interface. Investigation of charge exchange with oxygen vacancies in SiO[sub2]; Analysis of defect microstructures and energetics; Examination of hydrogen-related defects.