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Graphene oxide was obtained using the modified Hummers method. Some part of samples was prepared as multilayer graphene oxide - copper oxide structures. After temperature annealing the structures decreased the resistivity enabling investigations of interaction with the ambient gas. The response to nitrogen dioxide was determined and observed changes with varying measurement temperature and gas concentration explained.

Thin films of CuO and CuO/TiO2 were deposited by medium frequency magnetron sputtering on a variety of substrates for the purposes of gas sensing applications. Film characterization was performed by means of X-ray diffraction, XRD, scanning electron microscopy, SEM, and optical spectrophotometry. Gas sensing measurements were carried out in NO2 and H2 atmosphere at constant temperature chosen within the range of 200–400°C. Improvement in sensor response has been observed for CuO/TiO2 thin film heterostructures.

The cupric oxide (CuO) thin films are promising materials in gas sensor applications. The CuO exhibits the highest sensitivity for hydrogen sulfide, but it may be also used as a sensor for carbon monoxide or nitrogen dioxide. The sensitivity and long-term stability are critical issues in gas sensor applications. The authors present the results of investigation on nano-thin film of CuO and CuO doped with Au and Pd. The films were deposited in magnetron sputtering technology on LTCC substrates. The results of gas sensor response are presented and discussed. The long-term stability test were performed.

The authors designed and manufactured the gas micropreconcentrators in two of the most popular industry technologies: low temperature cofired ceramic (LTCC) and microelectromechanical systems (MEMS). Both structures have similar lateral dimensions: 20 mm × 25 mm × 1.2 mm for micropreconcentrator in LTCC technology and 20 mm × 20 mm × 1.68 mm for micropreconcentrator in MEMS technology. Both structures contain a 120 mm long channel filled with adsorbent material. The authors used commercially available adsorbents supplied by Sigma-Aldrich. In the paper the authors describe thermal measurements, power consumption and concentration factor tests of manufactured structures for gaseous acetone.

Monolithic active pixel detectors fabricated in SOI (Silicon On Insulator) technology are novel sensors of ionizing radiation, which exploit SOI substrates for the integration of readout electronics and a pixel detector. The fully depleted sensing diode has been manufactured under buried oxide (BOX) while read-out circuitry occupies upper silicon layer (‘device layer’). The development of the SOI detectors of ionizing radiation was started as a part of the SUCIMA project. During the project, it was proved that a monolithic SOI detector is a viable option for high-energy physics and medicine. The early prototypes suffered from significant leakage currents and soft breakdowns. These effects limited yield of production. Moreover, the p-wells (formed within the device layer and extended to the interface with the BOX), caused some local potential wells below the BOX at the top of depleted sensor area reducing the effective charge collection efficiency. The use a thicker device layer and optimized technology appeared to be a remedy.