62 results on '"Wernersson, L. E."'
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2. An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays: Digital and Analog Figures of Merit from 300K to 10K
3. Effect of Gate Oxide Defects on Tunnel Transistor RF Performance
4. Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector
5. The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs
6. Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V
7. InAs nanowire GAA n-MOSFETs with 12–15 nm diameter
8. InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications
9. Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor.
10. Design of radial nanowire tunnel field-effect transistors
11. InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V)
12. High transconductance self-aligned gate-last surface channel In0.53Ga0.47As MOSFET
13. 60 GHz impulse radio measurements
14. A 60 GHz super-regenerative oscillator for implementation in an impulse radio receiver
15. Tunneling-based devices and circuits
16. 60 GHz ultra-wideband impulse radio transmitter
17. MOVPE growth and structural charactrization of extremely lattice-mismatched InP-InSb nanowire heterostructures
18. Electrical Characterization of Vertical InAs Nanowires on Si
19. High frequency performance of vertical InAs nanowire MOSFET.
20. Admittance matching of 60 GHz rectangular dielectric resonator antennas for integrated impulse radio.
21. A 60 GHz super-regenerative oscillator for implementation in an impulse radio receiver.
22. 60 GHz wavelet generator for impulse radio applications.
23. Design and manufacturing of a dielectric resonator antenna for impulse radio at 60 GHz.
24. Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE.
25. Design of resonant tunneling permeable base transistors.
26. The effect of GaP in Al-free, GaAs-based resonant tunnelling diodes.
27. Semi-insulating GaAs by controlled introduction of metallic nano-Schottkies
28. Contacting of buried InP-based layers by epitaxial overgrowth over patterned tungsten features.
29. Semi-insulating properties of GaAs with artificially buried W discs.
30. InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices.
31. Semi-insulating GaAs by controlled introduction of metallic nano-Schottkies.
32. Transport and Schottky properties of GaInP capped GaInAs/InP quantum wells with extremely high electron mobilities.
33. Guest Editorial Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology.
34. A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation.
35. 20 GHz Wavelet Generator Using a Gated Tunnel Diode.
36. InP hot electron transistor with a buried metallic gate for electron emission
37. A resonant tunneling permeable base transistor with Al-free tunneling barriers
38. Circuits and devices with integrated VFETs and RTDs
39. The effect of GaP in Al-free, GaAs-based resonant tunnelling diodes
40. Semi-insulating properties of GaAs with artificially buried W discs
41. Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers.
42. Gated tunnel diode with a reactive bias stabilizing network for 60 GHz impulse radio implementations.
43. Comparing InSb, InAs, and InSb/InAs nanowire MOSFETs.
44. Scaling properties of (111) InAs Nanowire MOSFETs.
45. Electrical properties of HfO2/InAs MOS capacitors.
46. Control of Threshold Voltage in 80 nm Gate Length InAs Vertical Nanowire WIGFETs.
47. InAsP/InAs Nanowire Heterostructure Field Effect Transistors.
48. Resonant Tunneling Permeable Base Transistor for RF applications.
49. A combined UHV-CVD and rapid thermal diffusion process for SiGe Esaki diodes by ultra shallow junction formation.
50. A resonant tunneling permeable base transistor with Al-free tunneling barriers.
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