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Your search keyword '"Wahl, Jeremy A."' showing total 3 results
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3 results on '"Wahl, Jeremy A."'

1. mmWave and sub-THz Technology Development in Intel 22nm FinFET (22FFL) Process

Author

Yu, Qiang, primary, Rami, Said, additional, Waldemer, James, additional, Ma, Yunzhe, additional, Neeli, Vijaya, additional, Garrett, Jeffrey, additional, Liu, Guannan, additional, Koo, Jabeom, additional, Marulanda, Mauricio, additional, Morarka, Saurabh, additional, Ravikumar, Surej, additional, Yeh, Yi-Shin, additional, Chou, Jessica, additional, Brown, Thomas, additional, Rane, Triveni, additional, Nieva, Carlos, additional, Ali, Dyan, additional, Joglekar, Sameer, additional, Armstrong, Mark, additional, Wahl, Jeremy, additional, Paulson, Leif, additional, Dogiamis, Georgios, additional, Monroe, Nathan, additional, Han, Ruonan, additional, Lee, Hyung-Jin, additional, Fu, Hui, additional, Sell, Bernhard, additional, Karl, Eric, additional, and Zhang, Ying, additional

Published
2020
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3. Modifications of growth of strained silicon and dopant activation in silicon by cryogenic ion implantation and recrystallization annealing.

Author

Itokawa, Hiroshi, Berliner, Nathaniel C., Teehan, Sean, Wall, Donald R., Wahl, Jeremy A., Kim, Eunha, Li, Juntao, Demarest, James J., Ronsheim, Paul, and Paruchuri, Vamsi

Abstract

Formation of heavy C and/or P doping Si alloy with a strain and/or low resistivity in FinFET S/D having only {110} plane on fin sidewall poses a challenge because, if the CVD selective epitaxy typically used in recent S/D process integration is employed, it is extremely difficult to grow heavily doped Si alloys with defect-free microstructure on {110} crystallographic plane. We propose the combination of cryogenic ion-implant amorphization followed by nonmelt laser annealing regrowth for both strained C-incorporated Si solid-phase epitaxy and improvement of P-activation in heavily P-doped Si alloy epitaxially grown film, while annihilating defects. In this paper, the diffusion and the activation of C atoms and P atoms in Si with C additive are investigated for different nonmelt laser annealing conditions. Additionally, the influence of cryogenic implantation of Si+ into amorphized P-doped Si epitaxial layer followed by nonmelt laser annealing recystallization on the diffusion and activation of P atoms in Si is discussed. [ABSTRACT FROM PUBLISHER]

Published
2012
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