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We describe a source of 13.5 nm radiation, based on multi-kHz laser-plasmas created from tin-bearing micro-droplets that has a high probability of satisfying the requirements for EUVL, the next generation lithography for computer chip fabrication.

Summary form only given. Both laser and discharge produced plasma such as Z-pinch devices are being used as a light source for EUV lithography. A key challenge for discharge produced plasma (DPP) devices is achieving sufficient brightness to support the throughput requirements of high-volume manufacturing (HVM) lithography exposure tools. An integrated model for the description of hydrodynamics and optical processes in a DPP device has been developed and integrated into the HEIGHTS-EUV computer simulation package. Model development consisted of three main tasks: plasma evolution and MHD processes; detailed photon radiation transport, and physics of plasma/electrode interactions in DPP devices. Plasma flows have multidimensional character in pinch systems. Advanced numerical methods for the description of magnetic compression and diffusion in a cylindrical geometry are used in the HEIGHTS package. Radiation transport of both continuum and lines is taken into account with detailed spectral profiles in the EUV region. Radiation transport is solved using two different methods. Discharges using xenon and tin gases are simulated and compared. Benchmarking of EUV signals and plasma parameters in both laser and Z-pinch devices is presented