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2. Electrical characteristics of B+and BF2+implanted poly-Si and poly-GexSi1-xas gate material for sub-0.25μm applications

Author

Salm, C., Van Veen, D. T., Holleman, J., Woerlee, P. H., de Graaff, Henk C., and van Kranenburg, Herma

Abstract

The electrical properties of p-type doped poly-Si and poly-GexSi1-x, (x∼0.3) gate material were studied. The effect of dopant concentration and anneal temperature on the electrical behavior of these polycrystalline layers is investigated. A lower sheet resistance, higher Hall mobility and higher dopant activation is found for GexSi1-xcompared to Si at equal doping levels. MOS capacitors with B+and BF2+implanted gates were used to study boron penetration. Boron penetration is similar for Ge0.3Si0.7and Si. Gate depletion is dependent on the dopant activation hence GexSi1-xoffers the possibility for lower gate depletion compared to Si.

Published
1995

5. Significant performance advantage of electroabsorption modulator integrated distributed feedback laser (EML) transmitter in transporting multicarrier QAM signals.

Author

Chand, N., Bakker, L., van Veen, D., and Yadvish, R.D.

Abstract

Data are presented that show that, for transporting quadrature amplitude modulated (QAM) radiofrequency (RF) subcarriers in suboctave frequency range, electroabsorption modulator integrated distributed feedback lasers (EMLs) can he modulated with significantly higher (2.5 times) modulation index without any in-band signal distortion as compared to the directly or externally modulated (using LiNbO3 MZ modulator) distributed feedback (DFB) laser transmitters in the 1.55-μm band. This occurs when the selection of frequency range and biasing the modulator section of an EML is such that the third-order intermodulation distortion is suppressed and the second-order distortion is outside the in-band frequency range. We have used an equivalent of 64- and 256-QAM 40 carriers in 550-800 MHz with the test carrier modulated with 5.063 M symbols per second. For a given bit error rate (BER), the receiver sensitivity was as much as 4 dB (optical) higher with an EML-based transmitter compared to all other transmitters. The results are presented for QAM signals but they are equally applicable for other formats of digital modulation of RF carriers, such as quadrature phase shift keying (QPSK) in suboctave frequency range [ABSTRACT FROM PUBLISHER]

Published
2001
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6. Demonstration of a symmetrical 10/10 Gbit/s XG-PON2 system.

Author

van Veen, D., Suvakovic, D., Man Fai Lau, Krimmel, H., de Lind van Wijngaarden, A.J., Galaro, J., Dungee, J., Farah, B., Corteselli, S., Weeber, B., Tebbe, R., Eckard, D., Smith, J., Bouchard, J., Kotch, J., and Vetter, P.

Published
2011

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